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Amorphous silicon semiconductor solar cell

Patent ·
OSTI ID:7050568
; ; ; ; ;
A P-I-N type amorphous semiconductor solar cell is described including an amorphous silicon semiconductor film, wherein the amorphous silicon semiconductor film comprises at least hydrogen, carbon and oxygen as impurities and has a refractive index of 2.0-3.4, wherein the total quantity of carbon and oxygen in the amorphous silicon semiconductor film is at least 0.1 atom%, wherein the film comprises a A or an n layer thereof and the film comprises a window layer of the solar cell.
Assignee:
NOV; NOV-88-017031; EDB-88-129034
Patent Number(s):
US 4738729
OSTI ID:
7050568
Country of Publication:
United States
Language:
English

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Related Subjects

14 SOLAR ENERGY
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
36 MATERIALS SCIENCE
360603 -- Materials-- Properties
37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY
400201 -- Chemical & Physicochemical Properties
AMORPHOUS STATE
CARBON
CHEMICAL COMPOSITION
DESIGN
DIRECT ENERGY CONVERTERS
ELEMENTS
EQUIPMENT
FILMS
HYDROGEN
IMPURITIES
JUNCTIONS
NONMETALS
OPTICAL PROPERTIES
OXYGEN
P-N JUNCTIONS
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
PHYSICAL PROPERTIES
REFRACTIVITY
SEMICONDUCTOR JUNCTIONS
SEMIMETALS
SILICON
SILICON SOLAR CELLS
SOLAR CELLS
SOLAR EQUIPMENT
THIN FILMS