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U.S. Department of Energy
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Amorphous silicon semiconductor film and production process thereof

Patent ·
OSTI ID:5069636
A solar cell is described including an amorphous silicon semiconductor film as a window of the solar cell, the film having a refractive index of 2.8 to 3.4, the total quantity of nitrogen and oxygen within the film being from 1 to below 4 atom %.
Assignee:
Toa Nenryo Kogyo K.K. Tokyo
Patent Number(s):
US 4726851
OSTI ID:
5069636
Country of Publication:
United States
Language:
English