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Direct-patterned optical waveguides on amorphous silicon films

Patent ·
OSTI ID:1175452
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An optical waveguide structure is formed by embedding a core material within a medium of lower refractive index, i.e. the cladding. The optical index of refraction of amorphous silicon (a-Si) and polycrystalline silicon (p-Si), in the wavelength range between about 1.2 and about 1.6 micrometers, differ by up to about 20%, with the amorphous phase having the larger index. Spatially selective laser crystallization of amorphous silicon provides a mechanism for controlling the spatial variation of the refractive index and for surrounding the amorphous regions with crystalline material. In cases where an amorphous silicon film is interposed between layers of low refractive index, for example, a structure comprised of a SiO.sub.2 substrate, a Si film and an SiO.sub.2 film, the formation of guided wave structures is particularly simple.
Research Organization:
The Regents of the University of California, Oakland, CA (United States); Lawrence Livermore National Laboratory (LLNL), Livermore, CA (United States)
Sponsoring Organization:
USDOE
DOE Contract Number:
W-7405-ENG-48
Assignee:
The Regents of the University of California (Oakland, CA)
Patent Number(s):
6,925,216
Application Number:
10/676,876
OSTI ID:
1175452
Country of Publication:
United States
Language:
English

References (10)

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Hot-wire deposition of photonic-grade amorphous silicon journal September 2001
Relationship between fluence gradient and lateral grain growth in spatially controlled excimer laser crystallization of amorphous silicon films journal November 2000
Amorphous silicon-based guided-wave passive and active devices for silicon integrated optoelectronics journal January 1998
Propagation of light beams along line defects formed in a-Si/SiO2 three-dimensional photonic crystals: Fabrication and observation journal February 1999
Symmetrical waveguide devices fabricated by direct UV writing journal February 2002
Structural, Optical, and Electrical Properties of Amorphous Silicon Films journal March 1970
Melting Temperature and Explosive Crystallization of Amorphous Silicon during Pulsed Laser Irradiation journal June 1984
Influence of Ar impurities on optical refractive index of sputter deposited a–Si films journal July 1997
New excimer‐laser‐crystallization method for producing large‐grained and grain boundary‐location‐controlled Si films for thin film transistors journal March 1996

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36 MATERIALS SCIENCE