Alpha Radiation Effects on Silicon Oxynitride Waveguides

Journal Article · Wed Sep 21 04:00:00 EDT 2016 · ACS Photonics

DOI:https://doi.org/10.1021/acsphotonics.6b00431· OSTI ID:1340838

Morichetti, Francesco; Grillanda, Stefano; Manandhar, Sandeep; Shutthanandan, Vaithiyalingam; Kimerling, Lionel; Melloni, Andrea; Agarwal, Anuradha M.

Photonic technologies are today of great interest for use in harsh environments, such as outer space, where they can potentially replace current communication systems based on radiofrequency components. However, very much alike to electronic devices, the behavior of optical materials and circuits can be strongly altered by high-energy and high-dose ionizing radiations. Here, we investigate the effects of alpha () radiation with MeV-range energy on silicon oxynitride (SiON) optical waveguides. Irradiation with a dose of 5×1015 cm-2 increases the refractive index of the SiON core by nearly 10-2, twice as much that of the surrounding silica cladding, leading to a significant increase of the refractive index contrast of the waveguide. The higher mode confinement induced by -radiation reduces the loss of tightly bent waveguides. We show that this increases the quality factor of microring resonators by 20%, with values larger than 105 after irradiation.

• Research Organization: Pacific Northwest National Laboratory (PNNL), Richland, WA (US)
• Sponsoring Organization: USDOE
• DOE Contract Number: AC05-76RL01830
• OSTI ID: 1340838
• Report Number(s): PNNL-SA-121696; KP1704020
• Journal Information: ACS Photonics, Journal Name: ACS Photonics Journal Issue: 9 Vol. 3; ISSN 2330-4022
• Publisher: American Chemical Society (ACS)
• Country of Publication: United States
• Language: English

Related Subjects

Integrated photonics
alpha particles
high-energy radiations
silicon-oxynitride waveguides