Charge separation in bipolar transistors
Conference
·
OSTI ID:6618509
- Arizona Univ., Tucson, AZ (United States). Dept. of Electrical and Computer Engineering
- Naval Surface Warfare Center, Crane, IN (United States)
- Sandia National Labs., Albuquerque, NM (United States)
The effects of the midgap-level interface trap density and net oxide charge on the total-dose gain degradation of a bipolar transistor are separately identified. The superlinear dose dependence of the excess base current is explained.
- Research Organization:
- Sandia National Labs., Albuquerque, NM (United States)
- Sponsoring Organization:
- DOE; USDOE, Washington, DC (United States)
- DOE Contract Number:
- AC04-76DP00789
- OSTI ID:
- 6618509
- Report Number(s):
- SAND-93-0381C; CONF-930704--4; ON: DE93009624
- Country of Publication:
- United States
- Language:
- English
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Charge separation in bipolar transistors
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Related Subjects
42 ENGINEERING
426000 -- Engineering-- Components
Electron Devices & Circuits-- (1990-)
440200* -- Radiation Effects on Instrument Components
Instruments
or Electronic Systems
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
AMPLIFICATION
CHARGE CARRIERS
CHARGE TRANSPORT
GAIN
IONIZING RADIATIONS
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
RADIATIONS
RECOMBINATION
SEMICONDUCTOR DEVICES
TRANSISTORS
426000 -- Engineering-- Components
Electron Devices & Circuits-- (1990-)
440200* -- Radiation Effects on Instrument Components
Instruments
or Electronic Systems
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
AMPLIFICATION
CHARGE CARRIERS
CHARGE TRANSPORT
GAIN
IONIZING RADIATIONS
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
RADIATIONS
RECOMBINATION
SEMICONDUCTOR DEVICES
TRANSISTORS