Bounding the total-dose response of modern bipolar transistors

Conference · Wed Nov 30 23:00:00 EST 1994 · IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States)

OSTI ID:6762346

Kosier, S L; Wei, A; Schrimpf, R D ^[1]; Combs, W E ^[2]; Fleetwood, D M ^[3]; DeLaus, M ^[4]; Pease, R L ^[5]

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1. Univ. of Arizona, Tucson, AZ (United States). ECE Dept.
2. Naval Surface Warfare Center, Crane, IN (United States)
3. Sandia National Labs., Albuquerque, NM (United States)
4. Analog Devices, Inc., Wilmington, MA (United States)
5. RLP Research, Albuquerque, NM (United States)

The excess base current in an irradiated BJT increases super-linearly with total dose at low-total-dose levels. In this regime, the excess base current depends on the particular charge-trapping properties of the oxide that covers the emitter-base junction. The device response is dose-rate-, irradiation-bias-, and technology-dependent in this regime. However, once a critical amount of charge has accumulated in the oxide, the excess base current saturates at a value that is independent of how the charge accumulated. This saturated excess base current depends on the device layout, bulk lifetime in the base region, and the measurement bias. In addition to providing important insight into the physics of bipolar-transistor total-dose response, these results have significant circuit-level implications. For example, in some circuits, the transistor gain that corresponds to the saturated excess base current is sufficient to allow reliable circuit operation. For cases in which the saturated value of current gain is acceptable, and where other circuit elements permit such over-testing, this can greatly simplify hardness assurance for space applications.

• OSTI ID: 6762346
• Report Number(s): CONF-940726--
• Journal Information: IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States), Journal Name: IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States) Vol. 41:6Pt1; ISSN 0018-9499; ISSN IETNAE
• Country of Publication: United States
• Language: English

Related Subjects

440200* -- Radiation Effects on Instrument Components
Instruments
or Electronic Systems
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
DOSES
ELECTRICAL PROPERTIES
IONIZING RADIATIONS
JUNCTION TRANSISTORS
PHYSICAL PROPERTIES
PHYSICAL RADIATION EFFECTS
RADIATION DOSES
RADIATION EFFECTS
RADIATIONS
SEMICONDUCTOR DEVICES
TRANSISTORS