Defect production during ion implantation of various A/sub III/B/sub V/ semiconductors
The present paper gives a survey about the defect generation caused by ion implantation of GaAs, InAs, GaP, and InP. By combining Rutherford backscattering spectrometry, optical spectroscopy, and transmission electron microscopic methods, further information concerning the kinetics of the defect production as well as the type of defects created is obtained. Generally, the defect concentration in the region of implantation parameters investigated can be described by the energy density deposited into nuclear processes. Below critical values of the nuclear deposited energy density in GaAs weakly damaged layers containing point defects and point defect clusters are produced. With increasing nuclear deposited energy density an increasing number of amorphous zones is created due to manifold overlap of the initial defect clusters. The results indicate that in GaAs and InAs already at relatively low implantation temperatures, the amorphization occurs via homogeneous defect nucleation. The results obtained for GaP and InP, on the other hand, point at a remarkable contribution of heterogeneous defect nucleation already at room temperature, leading to amorphization at markedly lower nuclear deposited energy densities in spite of nearly identical values of the nuclear deposited energy. It is therefore concluded that defect recombination and annealing at room temperature is much less pronounced in the phosphides than in the arsenides.
- Research Organization:
- Friedrich-Schiller-Universitaet Jena, Sektion Physik, DDR-6900 Jena, Max-Wien-Platz 1, German Democratic Republic
- OSTI ID:
- 6617383
- Journal Information:
- J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 65:2; ISSN JAPIA
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
360605* -- Materials-- Radiation Effects
ANNEALING
ARSENIC COMPOUNDS
ARSENIDES
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
ENERGY-LEVEL DENSITY
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GALLIUM PHOSPHIDES
HEAT TREATMENTS
INDIUM ARSENIDES
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
ION IMPLANTATION
KINETICS
NUCLEATION
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PHYSICAL RADIATION EFFECTS
PNICTIDES
RADIATION EFFECTS
RECOMBINATION