Ion beam induced damage formation in binary and ternary III-V compounds - an overview
- Friedrich-Schiller-Universitaet Jena, Institut fuer Festkoerperphysik, Max-Wien-Platz 1, 07743 Jena (Germany)
The damage formation in ion implanted GaAs, InP, InAs, GaP, AlAs, AlxGa1-xAs and GaN is reviewed. The effect of substrate temperature, ion mass, ion dose rate and ion energy will be discussed. In the case of GaAs, InP, InAs and GaP a phenomenological description of the observed dependences can be given basing on the model of critical temperatures Tc. The dependence of Tc on the energy deposited in nuclear processes per ion and unit depth and on the dose rate can be represented by an empirical formula. Thus it becomes possible to predict the damage evolution which is to be expected for certain implantation conditions. The behaviour of AlAs and GaN during ion irradiation strongly differs from that of the materials mentioned above. Only at very low ion fluences the damage formation can be correlated to the nuclear energy deposition, whereas amorphization is achieved due to the presence of the implanted ions themselves. In AlxGa1-xAs a strong dependence on the Al content x is found.
- OSTI ID:
- 20634197
- Journal Information:
- AIP Conference Proceedings, Vol. 680, Issue 1; Conference: 17. international conference on the application of accelerators in research and industry, Denton, TX (United States), 12-16 Nov 2002; Other Information: DOI: 10.1063/1.1619804; (c) 2003 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
- Country of Publication:
- United States
- Language:
- English
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