Swift-heavy-ion-induced damage formation in III-V binary and ternary semiconductors

Journal Article · Mon Feb 15 04:00:00 EST 2010 · Physical Review. B, Condensed Matter and Materials Physics

DOI:https://doi.org/10.1103/PHYSREVB.81.075201· OSTI ID:21366684

Schnohr, C S; Kluth, P; Giulian, R; Llewellyn, D J; Byrne, A P; Cookson, D J; Ridgway, M C ^[1]

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1. Department of Electronic Materials Engineering, Research School of Physics and Engineering, Australian National University, Canberra, Australian Capital Territory 0200 (Australia)

Damage formation in InP, GaP, InAs, GaAs, and the related ternary alloys Ga{sub 0.50}In{sub 0.50}P and Ga{sub 0.47}In{sub 0.53}As irradiated at room temperature with 185 MeV Au ions was studied using Rutherford backscattering spectroscopy in channeling configuration, transmission electron microscopy, and small-angle x-ray scattering. Despite nearly identical ion-energy loss in these materials, their behavior under swift-heavy-ion irradiation is strikingly different: InP and Ga{sub 0.50}In{sub 0.50}P are readily amorphized, GaP and GaAs remain almost undamaged and InAs and Ga{sub 0.47}In{sub 0.53}As exhibit intermediate behavior. A material-dependent combination of irradiation-induced damage formation and annealing is proposed to describe the different responses of the III-V materials to electronic energy loss.

• OSTI ID: 21366684
• Journal Information: Physical Review. B, Condensed Matter and Materials Physics, Journal Name: Physical Review. B, Condensed Matter and Materials Physics Journal Issue: 7 Vol. 81; ISSN 1098-0121
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ALLOY SYSTEMS
AMORPHOUS STATE
ANNEALING
ARSENIC COMPOUNDS
ARSENIDES
BINARY ALLOY SYSTEMS
CHARGED PARTICLES
COHERENT SCATTERING
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
DIFFRACTION
ELECTRON MICROSCOPY
ENERGY LOSSES
ENERGY RANGE
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GALLIUM PHOSPHIDES
GOLD IONS
HEAT TREATMENTS
HEAVY IONS
INDIUM ARSENIDES
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
IONS
IRRADIATION
LOSSES
MATERIALS
MEV RANGE
MEV RANGE 100-1000
MICROSCOPY
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PHYSICAL RADIATION EFFECTS
PNICTIDES
RADIATION EFFECTS
RUTHERFORD BACKSCATTERING SPECTROSCOPY
SCATTERING
SEMICONDUCTOR MATERIALS
SMALL ANGLE SCATTERING
SPECTROSCOPY
TEMPERATURE RANGE
TEMPERATURE RANGE 0273-0400 K
TERNARY ALLOY SYSTEMS
TRANSMISSION ELECTRON MICROSCOPY
X-RAY DIFFRACTION