Thermal oxidation of gallium arsenide

Journal Article · Sun Jan 01 04:00:00 EST 1989 · J. Vac. Sci. Technol., A; (United States)

DOI:https://doi.org/10.1116/1.575730· OSTI ID:6617335

Monteiro, O R; Evans, J W

Here we present some results of transmission electron microscopy and secondary ion mass spectroscopy of thermally oxidized gallium arsenide with different types of dopants. At temperatures below 400 /sup 0/C an amorphous oxide is formed. Oxidation at temperatures between 500 and 600 /sup 0/C initially produces an epitaxial film of ..gamma..-Ga/sub 2/O/sub 3/. As the reaction proceeds, this film becomes polycrystalline and then transforms to ..beta..-Ga/sub 2/O/sub 3/. This film contains small crystallites of As/sub 2/O/sub 5/ and As/sub 2/O/sub 3/ in the case of the chromium doped samples, whereas only the former was detected in the case of silicon and tellurium doped samples. Elemental arsenic was always found at the interface between the oxide and GaAs. Chromium doped gallium also exhibited a slower oxidation kinetics than the other materials.

• Research Organization: Materials and Chemical Sciences Division, Lawrence Berkeley Laboratory and Department of Materials Science and Mineral Engineering, University of California, Berkeley, California 94720
• OSTI ID: 6617335
• Journal Information: J. Vac. Sci. Technol., A; (United States), Journal Name: J. Vac. Sci. Technol., A; (United States) Vol. 7:1; ISSN JVTAD
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360605* -- Materials-- Radiation Effects
ARSENIC
ARSENIC COMPOUNDS
ARSENIDES
CHALCOGENIDES
CHEMICAL REACTIONS
CHROMIUM
CRYSTAL DOPING
CRYSTAL-PHASE TRANSFORMATIONS
CRYSTALS
ELECTRON MICROSCOPY
ELEMENTS
EPITAXY
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GALLIUM OXIDES
HIGH TEMPERATURE
IMPURITIES
INTERFACES
KINETICS
METALS
MICROSCOPY
OXIDATION
OXIDES
OXYGEN COMPOUNDS
PHASE TRANSFORMATIONS
PNICTIDES
POLYCRYSTALS
SEMIMETALS
TRANSITION ELEMENTS
TRANSMISSION ELECTRON MICROSCOPY