Pseudomorphic InGaAs/GaAs/AlGaAs mirrors for optical devices in the near-infrared 0. 9--1. 3. mu. m

Journal Article · Sun Jan 01 04:00:00 EST 1989 · J. Appl. Phys.; (United States)

DOI:https://doi.org/10.1063/1.342553· OSTI ID:6615832

Gourley, P L; Dawson, L R

We propose using pseudomorphic multilayers of InGaAs, GaAs, and AlGaAs in optical mirrors for near-infrared devices including surface-emitting lasers, bistable optical devices, and optical modulators. We demonstrate the growth of a Fabry--Perot etalon by molecular-beam epitaxy and characterize it optically (reflectance, transmittance, photoluminescence) and structurally (scanning electron microscopy and dislocation imaging). We find the optical characteristics of the etalon as a whole and the individual quarter-wave layers indicate high structural quality for the mirrors. This is in spite of the fact that the lattice constant of the etalon structure is slightly relaxed from that of the GaAs substrate. These results indicate that pseudomorphic mirrors are useful candidates for integrated optical devices.

• Research Organization: Sandia National Laboratories, Albuquerque, New Mexico 87185
• OSTI ID: 6615832
• Journal Information: J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 65:1; ISSN JAPIA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360603* -- Materials-- Properties
42 ENGINEERING
420000 -- Engineering
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
DESIGN
EPITAXY
FABRICATION
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
INDIUM ARSENIDES
INDIUM COMPOUNDS
LASERS
LAYERS
MIRRORS
MOLECULAR BEAM EPITAXY
OPTICAL PROPERTIES
OPTICAL SYSTEMS
PHYSICAL PROPERTIES
PNICTIDES
REFLECTIVITY
SURFACE PROPERTIES