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Title: Spiral silicon drift detectors

Abstract

An advanced large area silicon photodiode (and x-ray detector), called Spiral Drift Detector, was designed, produced and tested. The Spiral Detector belongs to the family of silicon drift detectors and is an improvement of the well known Cylindrical Drift Detector. In both detectors, signal electrons created in silicon by fast charged particles or photons are drifting toward a practically point-like collection anode. The capacitance of the anode is therefore kept at the minimum (0.1pF). The concentric rings of the cylindrical detector are replaced by a continuous spiral in the new detector. The spiral geometry detector design leads to a decrease of the detector leakage current. In the spiral detector all electrons generated at the silicon-silicon oxide interface are collected on a guard sink rather than contributing to the detector leakage current. The decrease of the leakage current reduces the parallel noise of the detector. This decrease of the leakage current and the very small capacities of the detector anode with a capacitively matched preamplifier may improve the energy resolution of Spiral Drift Detectors operating at room temperature down to about 50 electrons rms. This resolution is in the range attainable at present only by cooled semiconductor detectors. 5 refs., 10more » figs.« less

Authors:
; ; ; ; ; ; ; ;
Publication Date:
Research Org.:
Brookhaven National Lab., Upton, NY (USA)
OSTI Identifier:
6613801
Report Number(s):
BNL-42147; CONF-881103-29
ON: DE89005770
DOE Contract Number:
AC02-76CH00016
Resource Type:
Conference
Resource Relation:
Conference: IEEE nuclear science symposium, Orlando, FL, USA, 9 Nov 1988; Other Information: Portions of this document are illegible in microfiche products
Country of Publication:
United States
Language:
English
Subject:
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY; SI SEMICONDUCTOR DETECTORS; DESIGN; BOUNDARY CONDITIONS; ENERGY RESOLUTION; WAVE FORMS; X-RAY SPECTRA; MEASURING INSTRUMENTS; RADIATION DETECTORS; RESOLUTION; SEMICONDUCTOR DETECTORS; SPECTRA 440104* -- Radiation Instrumentation-- High Energy Physics Instrumentation

Citation Formats

Rehak, P., Gatti, E., Longoni, A., Sampietro, M., Holl, P., Lutz, G., Kemmer, J., Prechtel, U., and Ziemann, T. Spiral silicon drift detectors. United States: N. p., 1988. Web.
Rehak, P., Gatti, E., Longoni, A., Sampietro, M., Holl, P., Lutz, G., Kemmer, J., Prechtel, U., & Ziemann, T. Spiral silicon drift detectors. United States.
Rehak, P., Gatti, E., Longoni, A., Sampietro, M., Holl, P., Lutz, G., Kemmer, J., Prechtel, U., and Ziemann, T. 1988. "Spiral silicon drift detectors". United States. doi:. https://www.osti.gov/servlets/purl/6613801.
@article{osti_6613801,
title = {Spiral silicon drift detectors},
author = {Rehak, P. and Gatti, E. and Longoni, A. and Sampietro, M. and Holl, P. and Lutz, G. and Kemmer, J. and Prechtel, U. and Ziemann, T.},
abstractNote = {An advanced large area silicon photodiode (and x-ray detector), called Spiral Drift Detector, was designed, produced and tested. The Spiral Detector belongs to the family of silicon drift detectors and is an improvement of the well known Cylindrical Drift Detector. In both detectors, signal electrons created in silicon by fast charged particles or photons are drifting toward a practically point-like collection anode. The capacitance of the anode is therefore kept at the minimum (0.1pF). The concentric rings of the cylindrical detector are replaced by a continuous spiral in the new detector. The spiral geometry detector design leads to a decrease of the detector leakage current. In the spiral detector all electrons generated at the silicon-silicon oxide interface are collected on a guard sink rather than contributing to the detector leakage current. The decrease of the leakage current reduces the parallel noise of the detector. This decrease of the leakage current and the very small capacities of the detector anode with a capacitively matched preamplifier may improve the energy resolution of Spiral Drift Detectors operating at room temperature down to about 50 electrons rms. This resolution is in the range attainable at present only by cooled semiconductor detectors. 5 refs., 10 figs.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = 1988,
month = 1
}

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  • An advanced large area silicon photodiode (and X-ray detector), called Spiral Drift Detector, was designed, produced and tested. The Spiral Detector belongs to the family of silicon drift detectors and is an improvement of the well known Cylindrical Drift Detector. In both detectors, signal electrons created in silicon by fast charged particles or photons are drifting toward a practically point-like collection anode. The capacitance of the anode is therefore kept at the minimum (0.1pF). The concentric rings of the cylindrical detector are replaced by a continuous spiral in the new detector. The spiral geometry detector design leads to a decreasemore » of the detector leakage current. In the spiral detector all electrons generated at the silicon-silicon oxide interface are collected on a guard sink rather than contributing to the detector leakage current. The decrease of the leakage current reduces the parallel noise of the detector. This decrease of the leakage current and the very small capacitance of the detector anode with a capacitively matched preamplifier may improve the energy resolution of Spiral Drift Detectors operating at room temperature down to about 50 electrons rms. This resolution is in the range attainable at present only by cooled semiconductor detectors.« less
  • In this paper the authors present two new ideas for drift detectors with two dimensional position resolution. The first idea is based on the regular drift detector, but has a slightly different design in order to deal with diffusion problems. The second idea embodies a completely new type of drift detector that uses drift time measurements for both dimensions. The design consists of concentric quadrilateral closed strips with a small collecting anode in the center. At first electrons travel perpendicular to the strips until they reach a diagonal. Then they proceed along this diagonal until they are collected at themore » centre. Position resolution in two dimensions can be obtained when both the time the electrons need to reach the diagonal and the time they need to reach the centre are measured. The latter is obtained from the collecting anode, the former form a diagonal strip present at the back side of the detector. Compared to common 2D drift detectors this detector offers the advantage of a small amount of read out electronics. It also has the advantage of having just one small collecting anode with a very low capacitance, resulting in low noise and therefore in a good energy resolution.« less
  • Large area linear Silicon Drift Detectors (SDD) were developed to be used in the Silicon Vertex Tracker (SVT) of the STAR experiment at the BNL relativistic heavy ion collider (RHIC). The SDD is in its final design and has been submitted for large scale production. Test results show that the detector exhibits excellent position resolution and low noise. A special characterization procedure was developed to test detector wafers in order to select good detectors for the SVT. Recently, 15 STAR/SVT SDD's were assembled as a tracking device in a BNL-AGS heavy ion experiment (E896). It is the first tracking applicationmore » of these detectors and their corresponding front-end electronics in an experimental environment. Preliminary results indicating good detector performance are shown and discussed in this paper.« less
  • Detection of multi-strange and charm particles requires precise measurements of the secondary vertices close to the interaction point and the decay products of strange and charm particles. This presents an unprecedented challenge for relativistic heavy ion experiments, where multiplicity reaches thousands of final state particles per collision. Development of affordable technology for realizing high spatial resolution and low mass vertex detectors has become the ultimate goal of many R&D projects in major laboratories. In this paper we present preliminary results on silicon drift detectors fabricated for the first time on p-type silicon substrates. These detectors were designed, fabricated and testedmore » recently at LBL and show very interesting properties which make their use in future experiments very likely.« less
  • We have fabricated a 4 cm {times} 4 cm, position-sensitive silicon drift detector using high purity, p-type silicon as the substrate. In this paper, we describe the double-sided planar process used to fabricate the detectors and the strategy used to suppress surface carrier inversion due to the presence of fixed positive charge at the Si/SiO{sub 2} interface. The key issue in optimizing the fabrication process has been to minimize leakage currents and prevent breakdown at low voltages. Tests show that a drift signal can be measured across the entire length of the detector and that the transit time of themore » holes varies linearly with the position of the induced charge signal.« less