Spectral linewidth of gain- and index-guided InGaAsP semiconductor lasers

Journal Article · Wed Aug 15 04:00:00 EDT 1984 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.95267· OSTI ID:6613107

Elsaesser, W; Goebel, E O

We report measurements of the spectral linewidth of InGaAsP lasers emitting at 1.3 ..mu..m as a function of the optical mode power. The spectral linewidth is of the order of 0.1--2.0 GHz for both gain- and index-guided lasers. The linewidth can be described by a modified Schawlow--Townes formula taking into account a power-independent contribution to the linewidth. This power-independent contribution is attributed to mode intensity fluctuations due to mode coupling.

• Research Organization: Max-Planck-Institut fuer Festkoerperforschung, Heisenbergstr. 1, 7000 Stuttgart 80, Federal Republic of Germany
• OSTI ID: 6613107
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 45:4; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
AMPLIFICATION
ARSENIC COMPOUNDS
ARSENIDES
COUPLING
FLUCTUATIONS
GAIN
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GALLIUM PHOSPHIDES
INDIUM ARSENIDES
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
LASERS
LINE WIDTHS
OPTICAL MODES
OSCILLATION MODES
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PNICTIDES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
VARIATIONS