Skip to main content
U.S. Department of Energy
Office of Scientific and Technical Information

Multimode effects in the spectral linewidth of semiconductor lasers

Journal Article · · IEEE J. Quant. Electron.; (United States)
We present experimental results on the spectral line width of one longitudinal laser mode of multimode semiconductor lasers with different emission wavelengths and different wave guiding. The dependence of line width on mode power cannot be described by a singlemode theory (modified Schawlow-Townes formula), for all lasers. The observed power independent contribution to the linewidth as well as the slope of the linewidth versus optical power data show significant multimode effects. A theoretical model for the linewidth of a twomode laser provides a qualitative description of the experimental results.
Research Organization:
Max-Planck-Institut fur Festkorperforschung, Stuttgart
OSTI ID:
6080661
Journal Information:
IEEE J. Quant. Electron.; (United States), Journal Name: IEEE J. Quant. Electron.; (United States) Vol. GE-21:6; ISSN IEJQA
Country of Publication:
United States
Language:
English

Similar Records

Spectral linewidth of gain- and index-guided InGaAsP semiconductor lasers
Journal Article · Wed Aug 15 00:00:00 EDT 1984 · Appl. Phys. Lett.; (United States) · OSTI ID:6613107

The semiconductor laser linewidth: A Green's function approach
Journal Article · Tue Nov 30 23:00:00 EST 1993 · IEEE Journal of Quantum Electronics (Institute of Electrical and Electronics Engineers); (United States) · OSTI ID:7071894

Power dependence of the linewidth enhancement term in semiconductor lasers
Journal Article · Fri Jun 15 00:00:00 EDT 1984 · Appl. Phys. Lett.; (United States) · OSTI ID:7022251