Coherence properties of gain- and index-guided semiconductor lasers

Journal Article · Wed Jun 01 04:00:00 EDT 1983 · IEEE J. Quant. Electron.; (United States)

DOI:https://doi.org/10.1109/JQE.1983.1071968· OSTI ID:5509207

Elsasser, W; Gobel, E O; Kuhl, J

The spectral linewidth of the longitudinal laser modes has been measured as a function of mode power for different types of gainguided as well as index-guided (GaAl)As double heterostructure laser diodes. Various effects contributing to line broadening, such as spontaneous emission, carrier density fluctuations, changes of the resonator parameters, and mode competition are discussed.

• Research Organization: Max-Planck-Institut fur Festkorperforschung, Stuttgart
• OSTI ID: 5509207
• Journal Information: IEEE J. Quant. Electron.; (United States), Journal Name: IEEE J. Quant. Electron.; (United States) Vol. QE-19:6; ISSN IEJQA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
AMPLIFICATION
ARSENIC COMPOUNDS
ARSENIDES
CARRIER DENSITY
COHERENT PRODUCTION
CONTROL
ELECTRONIC EQUIPMENT
EMISSION SPECTRA
EQUIPMENT
GAIN
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
LASERS
LINE BROADENING
LINE WIDTHS
MODE CONTROL
PARTICLE PRODUCTION
PNICTIDES
RESONATORS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
SPECTRA