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Freely-migrating-defect production during irradiation at elevated temperatures

Journal Article · · Phys. Rev. B: Condens. Matter; (United States)
Radiation-induced segregation in a Cu--1 at. % Au alloy was investigated using in situ Rutherford backscattering spectrometry. The amount of Au atom depletion in the near surface region was measured as a function of dose during irradiation at 350 /sup 0/C with four ions of substantially different masses. Relative efficiencies for producing freely migrating defects were evaluated for 1.8-MeV /sup 1/H, /sup 4/He, /sup 20/Ne, and /sup 84/Kr ions by determining beam current densities that gave similar radiation-induced segregation rates. Irradiations with primary knock-on atom median energies of 1.7, 13, and 79 keV yielded relative efficiencies of 53, 7, and 6 %, respectively, compared to the irradiation with a 0.83-keV median energy. Despite quite different defect and host alloy properties, the relative efficiencies for producing freely migrating defects determined in Cu-Au are remarkably similar to those found previously in Ni-Si alloys. Hence, the reported efficiencies appear to offer a reliable basis for making quantitative correlations of microstructural changes induced in different alloy systems by a wide variety of irradiation particles.
Research Organization:
Energy Research Laboratory, Hitachi Ltd., 1168 Moriyamacho, Hitachi, Ibaraki 316, Japan
OSTI ID:
6604701
Journal Information:
Phys. Rev. B: Condens. Matter; (United States), Journal Name: Phys. Rev. B: Condens. Matter; (United States) Vol. 38:18; ISSN PRBMD
Country of Publication:
United States
Language:
English