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Freely-migrating defect production during irradiation at elevated temperature

Technical Report ·
OSTI ID:6481001
Radiation-induced segregation in a Cu-lat.% Au alloy was investigated using in situ Rutherford Backscattering Spectrometry. The amount of Au atom depletion in the near surface region was measured as a function of dose during irradiation at 350/degree/C with four ions of substantially different masses. Relative efficiencies for producing freely-migrating defects were evaluated for 1.8 MeV /sup 1/H, /sup 4/He, /sup 20/Ne and /sup 84/Kr ions by determining beam current densities that gave similar radiation-induced segregation rates. Irradiations with primary knock-on atom median energies of 1.7, 13 and 79 keV yielded relative efficiencies of 53, 7 and 6%, respectively, compared to the irradiation with a 0.83 keV median energy. Despite quite different defect and host alloy properties, the relative efficiencies for producing freely-migrating defects determined in Cu-Au are remarkably similar to those found previously in Ni-Si alloys. Hence, the reported efficiencies appear to offer a reliable basis for making quantitative correlations of microstructural changes induced in different alloy systems by a wide variety of irradiation particles. 27 refs., 9 figs., 3 tabs.
Research Organization:
Argonne National Lab., IL (USA)
DOE Contract Number:
W-31109-ENG-38
OSTI ID:
6481001
Report Number(s):
ANL/PPRNT-89-151; ON: DE89008336
Country of Publication:
United States
Language:
English