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U.S. Department of Energy
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Indium phosphide/cadmium sulfide thin-film solar cells. Quarterly report, July-October 1980

Technical Report ·
DOI:https://doi.org/10.2172/6602264· OSTI ID:6602264
InP thin films were deposited by planar reactive deposition on recrystallized CdS (RXCdS) and semi-insulating (100) InP substrates and evaluated as potential layers for an all-thin-film solar cell. One objective of this period was to grow InP on RXCdS at a substrate temperature which is high enough to permit the growth of p-type material but yet low enough to permit the epitaxial growth of large grains. Films prepared on RXCdS at approximately 330/sup 0/C contained a mixture of grains having both large and submicron lateral dimensions. Be-doped epitaxial films, deposited on semi-insulating InP at 330/sup 0/C, showed both n- and p-type behavior. Films prepared at higher temperatures with a freshly Be-charged indium source were p-type. However, at these temperatures, layers prepared after several runs with the same source were n-type. Analyses of the indium source and films were initiated to determine the cause of the transient doping.
Research Organization:
Hughes Research Labs., Malibu, CA (USA)
DOE Contract Number:
AC02-77CH00178
OSTI ID:
6602264
Report Number(s):
SERI/PR-9196-1-T1
Country of Publication:
United States
Language:
English