Indium phosphide/cadmium sulfide thin-film solar cells. Quarterly technical progress report No. 3, December 1979-April 1980

Technical Report · Sun Jun 01 04:00:00 EDT 1980

DOI:https://doi.org/10.2172/5171001· OSTI ID:5171001

Zanio, K.

Thin films (approx. 1 ..mu..m thick) and large grains (approx. 40 x 40 ..mu..m) of InP were epitaxially deposited on low-cost recrystallized CdS (RXCdS) substrates at 280/sup 0/C by planar reactive deposition. At 380/sup 0/C, a 0.4- to 1.0-..mu..m-thick In-Cd-S transition layer between the InP and the RXCdS degrades the quality of the InP epitaxy. However, p-type InP films were prepared at this temperature by Be-doping and capping the entire RXCdS substrate with InP. Large grains of CdTe (approx. 40 ..mu..m) were also deposited on RXCdS substrates at 460/sup 0/C by physical vapor deposition. The grain size of the RXCdS is typically 40 ..mu..m. However, during this period we prepared RXCdS with grains having dimensions up to 300 ..mu..m.

• Research Organization: Hughes Research Labs., Malibu, CA (USA)
• DOE Contract Number: AC02-77CH00178
• OSTI ID: 5171001
• Report Number(s): SERI/PR-8170-1-T1
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
36 MATERIALS SCIENCE
360601 -- Other Materials-- Preparation & Manufacture
ALLOYS
BERYLLIUM ADDITIONS
BERYLLIUM ALLOYS
CADMIUM COMPOUNDS
CADMIUM SULFIDE SOLAR CELLS
CADMIUM SULFIDES
CADMIUM TELLURIDES
CHALCOGENIDES
CRYSTAL DOPING
CRYSTAL STRUCTURE
DEPOSITION
DIRECT ENERGY CONVERTERS
EPITAXY
EQUIPMENT
FABRICATION
FILMS
GRAIN SIZE
INDIUM COMPOUNDS
INDIUM PHOSPHIDE SOLAR CELLS
INDIUM PHOSPHIDES
INORGANIC PHOSPHORS
MATERIALS
MICROSTRUCTURE
P-TYPE CONDUCTORS
PHOSPHIDES
PHOSPHORS
PHOSPHORUS COMPOUNDS
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
PLATING
PNICTIDES
RECRYSTALLIZATION
SEMICONDUCTOR MATERIALS
SIZE
SOLAR CELLS
SOLAR EQUIPMENT
SUBSTRATES
SULFIDES
SULFUR COMPOUNDS
SURFACE COATING
TELLURIDES
TELLURIUM COMPOUNDS
VAPOR PLATING