SIMS Characterization of Amorphous Silicon Germanium Alloys Grown by Hot-Wire Deposition
Conference
·
OSTI ID:6602
In this paper, we present methods for the quantitative secondary ion mass spectrometry (SIMS) characterization of amorphous SiGe:H alloy materials. A set of samples was grown with germanium content ranging from 5% to 77% and was subsequently analyzed by electron probe X-ray microanalysis (EPMA) and nuclear reaction analysis (NRA). Calibration of the SIMS quantification was performed with respect to EPMA data for germanium and NRA data for hydrogen.
- Research Organization:
- National Renewable Energy Lab., Golden, CO (US)
- Sponsoring Organization:
- US Department of Energy (US)
- DOE Contract Number:
- AC36-83CH10093
- OSTI ID:
- 6602
- Report Number(s):
- NREL/CP-520-25629; ON: DE00006602
- Country of Publication:
- United States
- Language:
- English
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