SIMS characterization of amorphous silicon germanium alloys grown by hot-wire deposition

Journal Article · Mon Mar 01 04:00:00 EST 1999 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.57999· OSTI ID:355400

Reedy, R C; Mason, A R; Nelson, B P; Xu, Y ^[1]

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1. National Renewable Energy Laboratory, 1617 Cole Blvd., Golden, Colorado 80401 (United States)

In this paper, we present methods for the quantitative secondary ion mass spectrometry (SIMS) characterization of amorphous SiGe:H alloy materials. A set of samples was grown with germanium content ranging from 5{percent} to 77{percent} and was subsequently analyzed by electron probe X-ray microanalysis (EPMA) and nuclear reaction analysis (NRA). Calibration of the SIMS quantification was performed with respect to EPMA data for germanium and NRA data for hydrogen. {copyright} {ital 1999 American Institute of Physics.}

• Research Organization: National Renewable Energy Laboratory
• Sponsoring Organization: USDOE
• DOE Contract Number: AC36-83CH10093
• OSTI ID: 355400
• Report Number(s): CONF-980935--
• Journal Information: AIP Conference Proceedings, Journal Name: AIP Conference Proceedings Journal Issue: 1 Vol. 462; ISSN 0094-243X; ISSN APCPCS
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
AMORPHOUS STATE
CHEMICAL VAPOR DEPOSITION
GERMANIUM ALLOYS
HYDROGEN
HYDROGEN ADDITIONS
MASS SPECTROSCOPY
MEASURING METHODS
SILICON ALLOYS