SIMS characterization of amorphous silicon germanium alloys grown by hot-wire deposition

Journal Article · Fri Mar 05 04:00:00 EST 1999 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.57999· OSTI ID:21205266

Reedy, R C; Mason, A R; Nelson, B P; Xu, Y ^[1]

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1. National Renewable Energy Laboratory, 1617 Cole Blvd., Golden, Colorado 80401 (United States)

In this paper, we present methods for the quantitative secondary ion mass spectrometry (SIMS) characterization of amorphous SiGe:H alloy materials. A set of samples was grown with germanium content ranging from 5% to 77% and was subsequently analyzed by electron probe X-ray microanalysis (EPMA) and nuclear reaction analysis (NRA). Calibration of the SIMS quantification was performed with respect to EPMA data for germanium and NRA data for hydrogen.

• OSTI ID: 21205266
• Journal Information: AIP Conference Proceedings, Journal Name: AIP Conference Proceedings Journal Issue: 1 Vol. 462; ISSN 0094-243X; ISSN APCPCS
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
AMORPHOUS STATE
CHEMICAL VAPOR DEPOSITION
CONCENTRATION RATIO
ELECTRON MICROPROBE ANALYSIS
ELECTRON PROBES
GERMANIUM
GERMANIUM SILICIDES
INTERMETALLIC COMPOUNDS
ION MICROPROBE ANALYSIS
MASS SPECTROSCOPY
NUCLEAR REACTION ANALYSIS
SEMICONDUCTOR MATERIALS
SILICON
WIRES