Large-signal numerical and analytical HBT models

Journal Article · Sat May 01 00:00:00 EDT 1993 · IEEE Transactions on Electron Devices (Institute of Electrical and Electronics Engineers); (United States)

DOI:https://doi.org/10.1109/16.210188· OSTI ID:6599805

Teeter, D A; East, J R; Mains, R K; Haddad, G I ^[1]

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1. Univ. of Michigan, Ann Arbor (United States)

Several large-signal HBT models are investigated in this paper to determine their usefulness at millimeter-wave frequencies. The most detailed model involves numerically solving moments of the Boltzmann Transport Equation. A description of the numerical model is given along with several simulated results. The numerical model is then used to evaluate two analytical HBT models, the conventional Gummel-Poon model and a modified Ebers-Moll model. It is found that the commonly used Gummel-Poon model exhibits poor agreement with numerical and experimental data at millimeter-wave frequencies due to neglect of transit-time delays. Improved agreement between measured and modeled data result by including transit-time effects in an Ebers-Moll model. This simple model has direct application to millimeter-wave power amplifier and oscillator design. Several measured results are presented to help verify the simple model.

• OSTI ID: 6599805
• Journal Information: IEEE Transactions on Electron Devices (Institute of Electrical and Electronics Engineers); (United States), Journal Name: IEEE Transactions on Electron Devices (Institute of Electrical and Electronics Engineers); (United States) Vol. 40:5; ISSN 0018-9383; ISSN IETDAI
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
426000* -- Engineering-- Components
Electron Devices & Circuits-- (1990-)
AMPLIFIERS
ANALYTICAL SOLUTION
COMPARATIVE EVALUATIONS
ELECTRONIC EQUIPMENT
EQUIPMENT
EVALUATION
HETEROJUNCTIONS
JUNCTION TRANSISTORS
JUNCTIONS
MATHEMATICAL MODELS
NUMERICAL SOLUTION
OSCILLATORS
POWER AMPLIFIERS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
TRANSISTORS
USES