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Modeling the effects of neutron irradiation on bipolar transistors and infrared light emitting diodes

Thesis/Dissertation ·
OSTI ID:7264510

The work addresses the effects of neutron irradiation on bipolar transistors by studying the change in Gummel-Poon static large signal model parameters caused by neutron irradiation. Results then are used to develop a mathematical model of the damage factor for all collector current levels. The relationship between neutron damage factor, K, and Gummel-Poon model parameters for different current levels (i.e., low-, mid-, and high-current) are presented. Another objective was to investigate the possibility of using some of the Gummel-Poon model parameters, such as C{sub 2},' which is sensitive to neutron irradiation, in neutron dosimetry. The results indicate that the variation in C{sub 2} due to neutron irradiation is primarily due to the displacement of silicon atoms and therefore, can be used for neutron dosimetry. Another objective was to investigate the output power degradation of infrared light emitting diodes (IREDs) with fast neutron irradiation. An analytical model derived for LEDs can be used to predict lifetime damage constant product, {tau}{sub o}K{sub l}, from light output measurements as a function of neutron fluence. Finally, the effects of post-irradiation high-temperature annealing on device damage are discussed.

Research Organization:
Arkansas Univ., Fayetteville, AR (United States)
OSTI ID:
7264510
Country of Publication:
United States
Language:
English