Modeling the effects of neutron irradiation on bipolar transistors and infrared light emitting diodes
The work addresses the effects of neutron irradiation on bipolar transistors by studying the change in Gummel-Poon static large signal model parameters caused by neutron irradiation. Results then are used to develop a mathematical model of the damage factor for all collector current levels. The relationship between neutron damage factor, K, and Gummel-Poon model parameters for different current levels (i.e., low-, mid-, and high-current) are presented. Another objective was to investigate the possibility of using some of the Gummel-Poon model parameters, such as C{sub 2},' which is sensitive to neutron irradiation, in neutron dosimetry. The results indicate that the variation in C{sub 2} due to neutron irradiation is primarily due to the displacement of silicon atoms and therefore, can be used for neutron dosimetry. Another objective was to investigate the output power degradation of infrared light emitting diodes (IREDs) with fast neutron irradiation. An analytical model derived for LEDs can be used to predict lifetime damage constant product, {tau}{sub o}K{sub l}, from light output measurements as a function of neutron fluence. Finally, the effects of post-irradiation high-temperature annealing on device damage are discussed.
- Research Organization:
- Arkansas Univ., Fayetteville, AR (United States)
- OSTI ID:
- 7264510
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
Instruments
or Electronic Systems
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
ANNEALING
BEAMS
DAMAGING NEUTRON FLUENCE
ELECTROMAGNETIC RADIATION
HEAT TREATMENTS
INFRARED RADIATION
LIGHT EMITTING DIODES
MATHEMATICAL MODELS
NEUTRON BEAMS
NEUTRON FLUENCE
NUCLEON BEAMS
PARTICLE BEAMS
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
RADIATIONS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
TRANSISTORS