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Measurement of the neutron energy dependence of base current degradation of a silicon bipolar transistor

Conference · · IEEE (Inst. Elec. Electron. Eng.), Trans. Nucl. Sci., v. NS-20, no. 6, pp. 341-348
OSTI ID:4326124
;

A measurement of the neutron energy dependence of base current of a small signal bipolar transistor is given. The theory of the method, the neutron radiation damage calibration and measurement, the neutron dosimetry, and an experiment to test the concepts and to obtain preliminary results are described. (auth)

Research Organization:
Sandia Labs., Albuquerque, NM
NSA Number:
NSA-29-029584
OSTI ID:
4326124
Journal Information:
IEEE (Inst. Elec. Electron. Eng.), Trans. Nucl. Sci., v. NS-20, no. 6, pp. 341-348, Journal Name: IEEE (Inst. Elec. Electron. Eng.), Trans. Nucl. Sci., v. NS-20, no. 6, pp. 341-348; ISSN IETNA
Country of Publication:
Country unknown/Code not available
Language:
English

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Related Subjects

*TRANSISTORS-- PHYSICAL RADIATION EFFECTS
ELECTRICAL PROPERTIES
ENERGY DEPENDENCE
N46300* --Instrumentation--Radiation Effects on Instrument Components
Instruments
or Electronic Systems
NEUTRON DOSIMETRY
NEUTRON SOURCES
NEUTRONS
NUCLEAR EXPLOSIONS
SILICON