Transistor collector breakdown in the presence of conducted EMP and gamma radiation

Conference · Sun Nov 30 23:00:00 EST 1975 · IEEE Trans. Nucl. Sci., v. NS-22, no. 6, pp. 2500-2502

OSTI ID:4083403

Rice, D H

In this paper we develop expressions which describe breakdown, negative resistance and latch characteristics for a common emitter transistor when exposed to simultaneous conducted EMP and ionizing radiation. These expressions are derived from a modified Ebers-Moll model and show that common emitter breakdown voltage is reduced, latch (or sustaining voltage) remains unchanged, and that the negative resistance characteristics are changed. Using the modified Ebers-Moll model good agreement between predicted and observed circuit response is demonstrated when the circuits are exposed to a rising collector voltage (due to EMP) and simultaneous ionizing (gamma) radiation. (auth)

• Research Organization: GTE Sylvania, Needham, MA
• NSA Number: NSA-33-020373
• OSTI ID: 4083403
• Journal Information: IEEE Trans. Nucl. Sci., v. NS-22, no. 6, pp. 2500-2502, Journal Name: IEEE Trans. Nucl. Sci., v. NS-22, no. 6, pp. 2500-2502; ISSN IETNA
• Country of Publication: United States
• Language: English

Related Subjects

*TRANSISTORS-- PHYSICAL RADIATION EFFECTS
440200* --Instrumentation--Radiation Effects on Instrument Components
Instruments
or Electronic Systems
BREAKDOWN
ELECTROMAGNETIC PULSES
GAMMA RADIATION
MATHEMATICAL MODELS
N46300* --Instrumentation--Radiation Effects on Instrument Components
Instruments
or Electronic Systems