Radiation-induced paramagnetism in a-Si:H

Journal Article · Thu Apr 01 04:00:00 EST 1982 · Phys. Rev. B: Condens. Matter; (United States)

DOI:https://doi.org/10.1103/PhysRevB.25.4362· OSTI ID:6598022

Pontuschka, W M; Carlos, W E; Taylor, P C; Griffith, R W

Several paramagnetic centers have been observed in doped and undoped a-Si:H after x irradiation at 77 K. The paramagnetic responses in nominally undoped a-Si:H include (1) an increase in the Si ''dangling-bond'' line, and (2) trapped NO/sub 2/ molecules. In O- and N-doped hydrogenated a-Si (a-Si:(H,O,N)) at least four responses are observed: (1) an increase in the Si ''dangling-bond'' line, (2), an oxygen-associated hole center which is probably a singly coordinated oxygen bonded either to a silicon or to another oxygen, (3) an sp/sup 3/-hybridized dangling bond on a silicon which is bonded to three oxygens (E' center), and (4) neutral, atomic hydrogen trapped in the a-Si:(H,O,N) matrix.

• Research Organization: Naval Research Laboratory, Washington, DC 20375
• OSTI ID: 6598022
• Journal Information: Phys. Rev. B: Condens. Matter; (United States), Journal Name: Phys. Rev. B: Condens. Matter; (United States) Vol. 25:7; ISSN PRBMD
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360605* -- Materials-- Radiation Effects
AMORPHOUS STATE
ATOMS
CHEMICAL BONDS
CRYSTAL DOPING
DATA
ELECTROMAGNETIC RADIATION
ELEMENTS
EXPERIMENTAL DATA
HOLES
HYDRIDES
HYDROGEN
HYDROGEN COMPOUNDS
INFORMATION
IONIZING RADIATIONS
LOW TEMPERATURE
MAGNETISM
NONMETALS
NUMERICAL DATA
PARAMAGNETISM
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
RADIATIONS
SILANES
SILICON COMPOUNDS
TRAPPING
X RADIATION