Substrate temperature effects in sputtered Si:H

Technical Report · Mon Aug 01 04:00:00 EDT 1983

OSTI ID:5495143

Martin, P M; Pawlewicz, W T

The influence of substrate temperature (T/sub s/) on hydrogen content, Si-H bonding, resistivity and optical band gap in sputtered Si:H was determined. Hydrogen content decreased from 48 to 8 atom % for an increase in T/sub s/ from 55/sup 0/ to 380/sup 0/C. This decrease was thermally activated by desorption processes, and was due almost entirely to a decrease in the (SiH/sub 2/)/sub n/ bond type. The concentration of singly bonded hydrogen, SiH, remained almost constant near 10 atom %. The electrical resistivity and optical band gap both decreased as T/sub s/ increased, and this was attributed to an increase in silicon dangling bonds. These results are related to the Si-H reaction probability and the residence time of a hydrogen atom on the surface of the film.

• Research Organization: Pacific Northwest Labs., Richland, WA (USA)
• DOE Contract Number: AC06-76RL01830
• OSTI ID: 5495143
• Report Number(s): PNL-SA-11550; ON: DE85016272
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360600* -- Other Materials
CHEMICAL BONDS
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
ELEMENTS
HYDRIDES
HYDROGEN ADDITIONS
HYDROGEN COMPOUNDS
OPTICAL PROPERTIES
ORGANIC COMPOUNDS
ORGANIC SILICON COMPOUNDS
PHYSICAL PROPERTIES
QUANTITY RATIO
SEMIMETALS
SILANES
SILICON
SILICON COMPOUNDS
SPUTTERING
TEMPERATURE EFFECTS