Advanced qualification techniques

Conference · Wed Jun 01 00:00:00 EDT 1994 · IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States)

DOI:https://doi.org/10.1109/23.299796· OSTI ID:6598013

Winokur, P S; Shaneyfelt, M R; Meisenheimer, T L; Fleetwood, D M ^[1]

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1. Sandia National Labs., Albuquerque, NM (United States)

This paper demonstrates use of the Qualified Manufacturers List (QML) methodology to qualify commercial and military microelectronics for use in space applications. QML ''builds in'' the hardness of product through statistical process control (SPC) of technology parameters relevant to the radiation response, test structure to integrated circuit (IC) correlations, and techniques for extrapolating laboratory test results to low-dose-rate space scenarios. Each of these elements is demonstrated and shown to be a cost-effective alternative to expensive end-of-line IC testing. Several examples of test structure-to-IC correlations are provided and recent work on complications arising from transistor scaling and geometry is discussed. The use of a 10-keV x-ray wafer-level test system to support SPC and establish ''process capability'' is illustrated and a comparison of 10-kev x-ray wafer-level test system to support SPC and establish ''process capability'' is illustrated and a comparison of 10-keV x-ray and Co[sup 60] gamma irradiations is provided for a wide range of CMOS technologies. The x-ray tester is shown to be cost-effective and its use in lot acceptance/qualification is recommended. Finally, a comparison is provided between MIL-STD-883, Test Method 1019.4, which governs the testing of packaged semiconductor microcircuits in the DoD, and ESA/SCC Basic Specification No. 22900, Europe's Total Dose Steady-State Irradiation Test Method. Test Method 1019.4 focuses on conservative estimates of MOS hardness for space and tactical applications, while Basic Specification 22900 focuses on improved simulation of low-dose-rate space environments.

• DOE Contract Number: AC04-94AL85000
• OSTI ID: 6598013
• Report Number(s): CONF-930953-; CODEN: IETNAE; TRN: 95-004940
• Journal Information: IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States), Vol. 41:3Pt1; Conference: RADECS '93: 2nd European conference on radiations and their effects on components and systems, Saint Malo (France), 13-16 Sep 1993; ISSN 0018-9499
• Country of Publication: United States
• Language: English

Related Subjects

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
MICROELECTRONIC CIRCUITS
RADIATION HARDENING
COBALT 60
COMPARATIVE EVALUATIONS
QUALITY ASSURANCE
SPACE FLIGHT
X RADIATION
BETA DECAY RADIOISOTOPES
BETA-MINUS DECAY RADIOISOTOPES
COBALT ISOTOPES
ELECTROMAGNETIC RADIATION
ELECTRONIC CIRCUITS
EVALUATION
HARDENING
INTERMEDIATE MASS NUCLEI
INTERNAL CONVERSION RADIOISOTOPES
IONIZING RADIATIONS
ISOMERIC TRANSITION ISOTOPES
ISOTOPES
MINUTES LIVING RADIOISOTOPES
NUCLEI
ODD-ODD NUCLEI
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
RADIATIONS
RADIOISOTOPES
YEARS LIVING RADIOISOT
440200* - Radiation Effects on Instrument Components
Instruments
or Electronic Systems