Dependence of total dose response of bipolar linear microcircuits on applied dose rate

Journal Article · Wed Nov 30 23:00:00 EST 1994 · IEEE Transactions on Nuclear Science

DOI:https://doi.org/10.1109/23.340614· OSTI ID:32028

McClure, S ^[1]; Will, W; Perry, G ^[2]; Pease, R L

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1. Hughes Space and Communications Co., Los Angeles, CA (United States)
2. Boeing Defense and Space Group, Seattle, WA (United States)

The effect of dose rate on the total dose radiation hardness of three commercial bipolar linear microcircuits is investigated. Total dose tests of linear bipolar microcircuits show larger degradation at 0.167 rad/s than at 90 rad/s even after the high dose rate test is followed by a room temperature plus a 100 C anneal. No systematic correlation could be found for degradation at low dose rate versus high dose rate and anneal. Comparison of the low dose rate with the high dose rate anneal data indicates that MIL-STD-883, method 1019.4 is not a worst-case test method when applied to bipolar microcircuits for low dose rate space applications.

• OSTI ID: 32028
• Report Number(s): CONF-940726--
• Journal Information: IEEE Transactions on Nuclear Science, Journal Name: IEEE Transactions on Nuclear Science Journal Issue: 6Pt1 Vol. 41; ISSN 0018-9499; ISSN IETNAE
• Country of Publication: United States
• Language: English

Related Subjects

44 INSTRUMENTATION
INCLUDING NUCLEAR AND PARTICLE DETECTORS
ANNEALING
COMPARATIVE EVALUATIONS
DOSE RATES
ELECTRICAL PROPERTIES
EXPERIMENTAL DATA
MICROELECTRONIC CIRCUITS
RADIATION HARDENING