Response of advanced bipolar processes to ionizing radiation

Conference · Sun Dec 01 04:00:00 EST 1991 · IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States)

OSTI ID:5825996

Enlow, E W; Pease, R L ^[1]; Combs, W ^[2]; Schrimpf, R D; Nowlin, R N ^[3]

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1. Mission Research Corp., Albuquerque, NM (United States)
2. Naval Weapons Support Center, Crane, IN (United States)
3. Arizona Univ., Tucson, AZ (United States). Dept. of Electrical and Computer Engineering

In this paper ionizing radiation induced gain degradation in microcircuit bipolar polysilicon and crystalline emitter transistors is investigated. In this work, {sup 60}Co irradiation testing was performed on bipolar test structures. The effects of collector bias, dose rate, and anneal temperature are discussed. Major differences in the radiation response of polysilicon emitter transistors are demonstrated as a function of dose rate. The worst-case gain degradation occurs at the lowest dose rate complicating hardness assurance testing procedures. The dose rate and anneal data suggest that MIL-STD-883B Test Method 1019.4 is non-conservative for polysilicon emitter transistors, which show enhanced radiation hardness over the crystalline emitter transistors.

• OSTI ID: 5825996
• Report Number(s): CONF-910751--
• Conference Information: Journal Name: IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States) Journal Volume: 38:6
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
426000 -- Engineering-- Components
Electron Devices & Circuits-- (1990-)
440200* -- Radiation Effects on Instrument Components
Instruments
or Electronic Systems
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
AMPLIFICATION
ANNEALING
BETA DECAY RADIOISOTOPES
BETA-MINUS DECAY RADIOISOTOPES
COBALT 60
COBALT ISOTOPES
CRYSTALS
DOSE RATES
ELECTRONIC CIRCUITS
ELEMENTS
GAIN
HARDENING
HEAT TREATMENTS
INHIBITION
INTERMEDIATE MASS NUCLEI
INTERNAL CONVERSION RADIOISOTOPES
IONIZATION
ISOMERIC TRANSITION ISOTOPES
ISOTOPES
MICROELECTRONIC CIRCUITS
MINUTES LIVING RADIOISOTOPES
NUCLEI
ODD-ODD NUCLEI
PHYSICAL RADIATION EFFECTS
POLYCRYSTALS
RADIATION EFFECTS
RADIATION HARDENING
RADIOISOTOPES
SEMICONDUCTOR DEVICES
SEMIMETALS
SILICON
TEMPERATURE DEPENDENCE
TESTING
TRANSISTORS
YEARS LIVING RADIOISOT