Implementing QML (Qualified Manufacturers List) for radiation hardness assurance

Conference · Mon Jan 01 00:00:00 EST 1990

OSTI ID:6727928

Winokur, P S; Sexton, F W; Fleetwood, D M; Terry, M D; Shaneyfelt, M R; Dressendorfer, P V; Schwank, J R

Statistical process control (SPC) of technology parameters relevant to radiation hardness, test structure to Integrated Circuit (IC) correlation, and extrapolation from laboratory to threat scenarios are keys to implementing Qualified Manufacture's List (QML) for radiation hardness assurance in a cost-effective manner. Data from approximately 300 wafer lots fabricated in Sandia's 4/3-{mu}m and Complementry Metal Oxide Semiconductor (CMOS) IIIA (2-{mu}m) technologies are used to demonstrate approaches to, and highlight issues associated with, implementing QML for radiation-hardened CMOS in space applications. An approach is demonstrated to implement QML for signal-event upset SEU immunity on 16k SRAMs that involves relating values of feedback resistance to system error rates. It is seen that the process capability indices, C{sub p} and C{sub pk}, for the manufacture of 400 k{Omega} feedback resistors required to provide SEU tolerance do not conform to 6{sigma}'' quality standards. For total-dose, {triangle}V{sub it} shifts measured on transistors are correlated with circuit response in the space environment. SPC is illustrated for {triangle}V{sub it}, and violations of SPC rules are interpreted in terms of continuous improvement. Finally, design validation for SEU, and quality conformance inspections for total-dose, are identified as major obstacles to cost-effective QML implementation. Techniques and tools that will help QML provide real cost savings are identified as physical models, three-dimensional device-plus-circuit codes, and improved design simulators. 29 refs., 10 figs., 1 tab.

• Research Organization: Sandia National Labs., Albuquerque, NM (USA)
• Sponsoring Organization: USDOD; DOE/DP
• DOE Contract Number: AC04-76DP00789
• OSTI ID: 6727928
• Report Number(s): SAND-90-1845C; CONF-900723-15; ON: DE90015697
• Resource Relation: Conference: 27. IEEE annual international nuclear and space radiation effects conference, Reno, NV (USA), 16-20 Jul 1990
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
45 MILITARY TECHNOLOGY, WEAPONRY, AND NATIONAL DEFENSE
36 MATERIALS SCIENCE
99 GENERAL AND MISCELLANEOUS//MATHEMATICS, COMPUTING, AND INFORMATION SCIENCE
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
ELECTRONIC EQUIPMENT
RADIATION HARDENING
MANUFACTURERS
QUALITY ASSURANCE
BALLISTIC MISSILE DEFENSE
COST BENEFIT ANALYSIS
DOSE RATES
EXTRAPOLATION
FEEDBACK
IMPLEMENTATION
INTEGRATED CIRCUITS
MEMORY DEVICES
PERFORMANCE TESTING
REGULATIONS
RESPONSE FUNCTIONS
SENSITIVITY
SHIELDING
STANDARDS
STATISTICAL MODELS
TECHNOLOGY ASSESSMENT
VALIDATION
VARIATIONS
VIOLATIONS
VULNERABILITY
ELECTRONIC CIRCUITS
EQUIPMENT
FUNCTIONS
HARDENING
MATHEMATICAL MODELS
MICROELECTRONIC CIRCUITS
NATIONAL DEFENSE
NUMERICAL SOLUTION
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
TESTING
426000* - Engineering- Components
Electron Devices & Circuits- (1990-)
450500 - Military Technology
Weaponry
& National Defense- Strategic Defense Initiative- (1990-)
360605 - Materials- Radiation Effects
990200 - Mathematics & Computers
440200 - Radiation Effects on Instrument Components
Instruments
or Electronic Systems