Laser-induced diffusion by irradiation of silicon dipped into an organic solution of the dopant

Journal Article · Fri May 01 00:00:00 EDT 1981 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.92490· OSTI ID:6592688

Stuck, R; Fogarassy, E; Muller, J C; Hodeau, M; Wattiaux, A; Siffert, P

A new method for preparation of p-n junctions is presented. It consists in dipping the silicon to be doped into an organic liquid containing the dopant and irradiating its surface through the liquid with a high-energy pulsed ruby laser. It is shown that by this treatment the dopant is driven into the crystal and that abrupt junctions with high doping levels can be realized. Using this simple technique, solar cells with AM1 efficiencies above 13% can be prepared.

• Research Organization: Centre de Recherches Nucleaires, Groupe de Physique et Applications des semiconducteurs (PHASE) 67037 Strasbourg-Cedex, France
• OSTI ID: 6592688
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 38:9; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
140501 -- Solar Energy Conversion-- Photovoltaic Conversion
36 MATERIALS SCIENCE
360601* -- Other Materials-- Preparation & Manufacture
DATA
DIFFUSION
DIRECT ENERGY CONVERTERS
DISPERSIONS
DOPED MATERIALS
ELECTROMAGNETIC RADIATION
ELEMENTS
EQUIPMENT
FABRICATION
INFORMATION
IRRADIATION
JUNCTIONS
LASER RADIATION
LASERS
MATERIALS
MIXTURES
ORGANIC COMPOUNDS
P-N JUNCTIONS
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
PULSES
QUANTITY RATIO
RADIATION EFFECTS
RADIATIONS
RUBY LASERS
SEMICONDUCTOR JUNCTIONS
SEMIMETALS
SILICON
SILICON SOLAR CELLS
SOLAR CELLS
SOLAR EQUIPMENT
SOLID STATE LASERS
SOLUTIONS
SURFACES