Silicon solar cells realized by laser induced diffusion of vacuum-deposited dopants
A technique for solar cell preparation based on vacuum deposition of thin films of dopants on silicon, followed by irradiation with a high-energy (approx.1.5 J/cm/sup 2/) ruby laser pulse is described. Several dopants like phosphorus, antimony, bismuth, aluminium, gallium, and indium have been investigated. Electrical and Rutherford backscattering measurements indicate that the dopant is dissolved in the silicon and becomes electrically active, as a result of the irradiation. The P-N junctions which are formed are shallow (depth <4000 A) but heavily doped, since after the laser treatment the solubility of the dopant is generally higher than after a thermal diffusion. Therefore good diode characteristics can be achieved by this simple method, and solar cells up to 14 % efficiency under AM1 (air mass 1) illumination have been realized using dopants like phosphorus, antimony, bismuth, aluminium, or gallium.
- Research Organization:
- Centre De Recherches Nucleaires, Groupe de Physique et Applications des Semiconducteurs (PHASE), 67037 Strasbourg-Cedex, France
- OSTI ID:
- 6580355
- Journal Information:
- J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 52:2; ISSN JAPIA
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
ALUMINIUM
ANTIMONY
BACKSCATTERING
BISMUTH
DEPOSITION
DIFFUSION
DIRECT ENERGY CONVERTERS
DOPED MATERIALS
ELASTIC SCATTERING
ELECTRICAL PROPERTIES
ELEMENTS
EQUIPMENT
GALLIUM
HEATING
INDIUM
IRRADIATION
JUNCTIONS
LASER-RADIATION HEATING
LASERS
MATERIALS
METALS
NONMETALS
P-N JUNCTIONS
PHOSPHORUS
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
PHYSICAL PROPERTIES
PLASMA HEATING
PULSES
RUBY LASERS
RUTHERFORD SCATTERING
SCATTERING
SEMICONDUCTOR JUNCTIONS
SEMIMETALS
SILICON
SILICON SOLAR CELLS
SOLAR CELLS
SOLAR EQUIPMENT
SOLID STATE LASERS