Static atomic displacements in a CdTe epitaxial layer on a GaAs substrate

Journal Article · Mon May 25 04:00:00 EDT 1987 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.97807· OSTI ID:6584868

Horning, R D; Staudenmann, J

A (001)CdTe epitaxial layer on a (001)GaAs substrate was studied by x-ray diffraction between 10 and 360 K. The CdTe growth took place at 380 /sup 0/C in a vertical gas flow metalorganic chemical vapor deposition reactor. Lattice parameters and integrated intensities of both the substrate and the epitaxial layer using the (00l) and (hhh) Bragg reflections reveal three important features. Firstly, the GaAs substrate does not exhibit severe strain after deposition and it is as perfect as a bulk GaAs. Secondly, the CdTe unit cell distorts tetragonally with a/sub perpendicular/>a/sub parallel/ below 300 K. The decay of the (00l) reflection intensities as a function of the temperature yields a Debye temperature of 142 K, the same value as for bulk CdTe. Thirdly, a temperature-dependent isotropic static displacement of the Cd and the Te atoms is introduced to account for the anomalous behavior of the (hhh) intensities.

• Research Organization: Department of Physics, Ames Laboratory USDOE and Iowa State University, Ames, Iowa 50011
• DOE Contract Number: W-7405-ENG-82
• OSTI ID: 6584868
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 50:21; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360601 -- Other Materials-- Preparation & Manufacture
360602* -- Other Materials-- Structure & Phase Studies
ARSENIC COMPOUNDS
ARSENIDES
CADMIUM COMPOUNDS
CADMIUM TELLURIDES
CHALCOGENIDES
CHEMICAL COATING
CHEMICAL VAPOR DEPOSITION
COATINGS
COHERENT SCATTERING
CRYSTAL STRUCTURE
DEPOSITION
DIFFRACTION
EPITAXY
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
PNICTIDES
SCATTERING
SURFACE COATING
TELLURIDES
TELLURIUM COMPOUNDS
VAPOR DEPOSITED COATINGS
VAPOR PHASE EPITAXY
X-RAY DIFFRACTION