X-ray-diffraction characterization of CdTe epitaxial layers on GaAs substrates as a function of temperature
Thesis/Dissertation
·
OSTI ID:7078016
X-ray-diffraction methods were used to study the structural and thermal properties of CdTe epitaxial layers on GaAs substrates. The technique of precession photography is introduced as an extremely useful method for qualitative characterization of thin films, and reveals twin faults in (1,1,1) oriented CdTe epilayers. Measurements of the Bragg reflections as a function of temperature were made between 10 and 360 K. These measurement reveal anomalous behavior in the lattice parameters of both the substrate and the epilayer in a (0,0,1) oriented sample deposited at 410/sup 0/C. The overall change in the CdTe lattice parameter in this temperature range was about five times larger than in bulk CdTe, and the change in the substrate lattice parameter was about three times the bulk value. These anomalies were absent in a similar sample deposited at 380/sup 0/C. Similar measurements were made on GaAs and CdTe single crystals for comparison. The Debye temperatures extracted from the integrated intensities of the reflections perpendicular to the surface are approx. 250 K for the GaAs substrates and approx. 142 K for the CdTe epilayers. These are the same as the corresponding values in single crystals of GaAs and CdTe, revealing no significant change in the overall vibrational properties. The Debye temperatures extracted form reflections not perpendicular to the surface are significantly lower.
- Research Organization:
- Iowa State Univ. of Science and Technology, Ames (USA)
- OSTI ID:
- 7078016
- Country of Publication:
- United States
- Language:
- English
Similar Records
X-ray diffraction characterization of CdTe epitaxial layers on GaAs substrates as a function of temperature
Static atomic displacements in a CdTe epitaxial layer on a GaAs substrate
Lattice parameter anomaly in an MOCVD CdTe epitaxial layer grown on a GaAs substrate
Technical Report
·
Fri Oct 31 23:00:00 EST 1986
·
OSTI ID:7151923
Static atomic displacements in a CdTe epitaxial layer on a GaAs substrate
Journal Article
·
Mon May 25 00:00:00 EDT 1987
· Appl. Phys. Lett.; (United States)
·
OSTI ID:6584868
Lattice parameter anomaly in an MOCVD CdTe epitaxial layer grown on a GaAs substrate
Conference
·
Thu May 01 00:00:00 EDT 1986
·
OSTI ID:5601523
Related Subjects
36 MATERIALS SCIENCE
360602* -- Other Materials-- Structure & Phase Studies
42 ENGINEERING
420800 -- Engineering-- Electronic Circuits & Devices-- (-1989)
ARSENIC COMPOUNDS
ARSENIDES
BRAGG REFLECTION
CADMIUM COMPOUNDS
CADMIUM TELLURIDES
CHALCOGENIDES
COHERENT SCATTERING
DEBYE TEMPERATURE
DIFFRACTION
EPITAXY
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HIGH TEMPERATURE
LATTICE PARAMETERS
LAYERS
PNICTIDES
REFLECTION
SCATTERING
SUBSTRATES
TELLURIDES
TELLURIUM COMPOUNDS
TEMPERATURE DEPENDENCE
X-RAY DIFFRACTION
360602* -- Other Materials-- Structure & Phase Studies
42 ENGINEERING
420800 -- Engineering-- Electronic Circuits & Devices-- (-1989)
ARSENIC COMPOUNDS
ARSENIDES
BRAGG REFLECTION
CADMIUM COMPOUNDS
CADMIUM TELLURIDES
CHALCOGENIDES
COHERENT SCATTERING
DEBYE TEMPERATURE
DIFFRACTION
EPITAXY
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HIGH TEMPERATURE
LATTICE PARAMETERS
LAYERS
PNICTIDES
REFLECTION
SCATTERING
SUBSTRATES
TELLURIDES
TELLURIUM COMPOUNDS
TEMPERATURE DEPENDENCE
X-RAY DIFFRACTION