Anomalous temperature dependence of lattice parameters of metalorganic chemical vapor deposition CdTe grown on GaAs
Journal Article
·
· Appl. Phys. Lett.; (United States)
It is reported that the lattice parameters of a 3-..mu..m-thick (1,0,0) single crystal CdTe epitaxial layer on a (1,0,0) single crystal GaAs substrate behave anomalously below 120 K. The epilayer used in this experiment was deposited at 410 /sup 0/C by metalorganic chemical vapor deposition. This x-ray lattice parameter study was done in the temperature range between about 8 and 300 K. Our results show that the lattice parameters perpendicular to the surface of both the GaAs substrate and the CdTe epilayer shrink four times more than the corresponding bulks when the samples are cooled down to 10 K. It is further seen that there is no compensation effect between the elements of the composite system; that is, the lattice parameters of the two materials change in the same direction as if the composite system: the epilayer and the thickness of the substrate which is probed by the x rays: would behave as a new material with entirely new physical properties.
- Research Organization:
- Ames Laboratory, USDOE and Department of Physics, Iowa State University, Ames, Iowa 50011
- DOE Contract Number:
- W-7405-ENG-82
- OSTI ID:
- 6066837
- Journal Information:
- Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 48:15; ISSN APPLA
- Country of Publication:
- United States
- Language:
- English
Similar Records
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Conference
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Thu May 01 00:00:00 EDT 1986
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OSTI ID:5601523
X-ray diffraction characterization of CdTe epitaxial layers on GaAs substrates as a function of temperature
Technical Report
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Fri Oct 31 23:00:00 EST 1986
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Thesis/Dissertation
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Tue Dec 31 23:00:00 EST 1985
·
OSTI ID:7078016
Related Subjects
36 MATERIALS SCIENCE
360601 -- Other Materials-- Preparation & Manufacture
360602* -- Other Materials-- Structure & Phase Studies
ARSENIC COMPOUNDS
ARSENIDES
CADMIUM COMPOUNDS
CADMIUM TELLURIDES
CHALCOGENIDES
CHEMICAL COATING
CHEMICAL VAPOR DEPOSITION
COATINGS
COHERENT SCATTERING
COMPOSITE MATERIALS
DEPOSITION
DIFFRACTION
EPITAXY
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HIGH TEMPERATURE
LATTICE PARAMETERS
MATERIALS
ORGANIC COMPOUNDS
ORGANOMETALLIC COMPOUNDS
PNICTIDES
SCATTERING
SURFACE COATING
TELLURIDES
TELLURIUM COMPOUNDS
TEMPERATURE DEPENDENCE
VAPOR DEPOSITED COATINGS
VAPOR PHASE EPITAXY
X-RAY DIFFRACTION
360601 -- Other Materials-- Preparation & Manufacture
360602* -- Other Materials-- Structure & Phase Studies
ARSENIC COMPOUNDS
ARSENIDES
CADMIUM COMPOUNDS
CADMIUM TELLURIDES
CHALCOGENIDES
CHEMICAL COATING
CHEMICAL VAPOR DEPOSITION
COATINGS
COHERENT SCATTERING
COMPOSITE MATERIALS
DEPOSITION
DIFFRACTION
EPITAXY
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HIGH TEMPERATURE
LATTICE PARAMETERS
MATERIALS
ORGANIC COMPOUNDS
ORGANOMETALLIC COMPOUNDS
PNICTIDES
SCATTERING
SURFACE COATING
TELLURIDES
TELLURIUM COMPOUNDS
TEMPERATURE DEPENDENCE
VAPOR DEPOSITED COATINGS
VAPOR PHASE EPITAXY
X-RAY DIFFRACTION