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Role of yttria-stabilized zirconia produced by ion-beam-assisted deposition on the properties of RuO{sub 2} on SiO{sub 2}/Si

Journal Article · · Journal of Materials Research
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  1. Materials Science and Technology Division, MS K763, Los Alamos National Laboratory, Los Alamos, New Mexico 87545 (United States)
Highly conductive biaxially textured RuO{sub 2} thin films were deposited on technically important SiO{sub 2}/Si substrates by pulsed laser deposition, where yttria-stabilized zirconia (YSZ) produced by ion-beam-assisted-deposition (IBAD) was used as a template to enhance the biaxial texture of RuO{sub 2} on SiO{sub 2}/Si. The biaxially oriented RuO{sub 2} had a room-temperature resistivity of 37 {mu}{Omega}-cm and residual resistivity ratio above 2. We then deposited Ba{sub 0.5}Sr{sub 0.5}TiO{sub 3} thin films on RuO{sub 2}/IBAD-YSZ/SiO{sub 2}/Si. The Ba{sub 0.5}Sr{sub 0.5}TiO{sub 3} had a pure (111) orientation normal to the substrate surface and a dielectric constant above 360 at 100 kHz. {copyright} {ital 1998 Materials Research Society.}
OSTI ID:
658478
Journal Information:
Journal of Materials Research, Journal Name: Journal of Materials Research Journal Issue: 9 Vol. 13; ISSN JMREEE; ISSN 0884-2914
Country of Publication:
United States
Language:
English