Application of defect spectroscopy to silicon processing technology
- AT T Bell Lab., Murray Hill, NJ (United States)
Established defect spectroscopies and silicon characterization techniques are successfully applied to device manufacturing quality control. Deep level transient spectroscopy, DLTS, and photoconducting decay recombination lifetime measurements routinely monitor epitaxial silicon. Fe and Mo are commonly observed contaminants. Processing tools, such as epitaxial reactors and ion-implantation machines, are regularly monitored for trace metals. Dislocations introduced by specific silicon processing steps are selectively studied with DLTS. Dislocation signatures are present in selectively grown epitaxial silicon as well as in shallow junctions created by BF[sub 2] implantation. As a final example, defects introduced by reactive ion etching of silicon are examined by DLTS, photoluminescence and spreading resistance profiling. The near surface displacement damage region is a source of interstitial defects which undergo recombination enhanced diffusion to depths as great as 1 [mu]m. Measurements previously reserved for research are now being successfully employed as monitors and controls to improve the quality of silicon microelectronic manufacturing. 14 refs., 6 figs.
- OSTI ID:
- 6583565
- Journal Information:
- Journal of Electronic Materials (A.I.M.E. Metallurgical Society); (United States), Journal Name: Journal of Electronic Materials (A.I.M.E. Metallurgical Society); (United States) Vol. 21:12; ISSN JECMA5; ISSN 0361-5235
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
360601* -- Other Materials-- Preparation & Manufacture
360602 -- Other Materials-- Structure & Phase Studies
CONTROL
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
DISLOCATIONS
ELECTRONIC CIRCUITS
ELEMENTS
ETCHING
LINE DEFECTS
LUMINESCENCE
MANUFACTURING
MICROELECTRONIC CIRCUITS
PHOTOLUMINESCENCE
QUALITY CONTROL
SEMIMETALS
SILICON
SPECTROSCOPY
SURFACE FINISHING