Time dependent electron and ion flow in pinched beam diodes. Interim report
Technical Report
·
OSTI ID:6582135
The time dependent impedance behavior of large-aspect-ratio, pinched-electron-beam diodes is studied using a computer simulation model. The results from a series of particle code simulations are used to construct a picture of the diode impedance as a function of voltage. This description is then used to compare calculated diode current with actual measured values, and good agreement is found. The code is also used to study dynamic pinch formation and ion current generation. A focusing model for the ions is presented. (Author)
- Research Organization:
- Naval Research Lab., Washington, DC (USA)
- OSTI ID:
- 6582135
- Report Number(s):
- AD-A-056362; NRL-MR-3702
- Country of Publication:
- United States
- Language:
- English
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