Time-dependent impedance behavior of low-impedance REB diodes during self-pinching

Journal Article · Fri Sep 01 04:00:00 EDT 1978 · J. Appl. Phys.; (United States)

DOI:https://doi.org/10.1063/1.325550· OSTI ID:6750454

Johnson, D J; Goldstein, S A; Lee, R; Oliphant, W F

The time-dependent impedance behavior of large-aspect-ratio pinched electron-beam diodes with no external magnetic field is investigated using two pulsers having 0.4--1.0 MV voltage, and the experimental results are compared to predictions from a time-dependent computer code which incorporates several important mechanisms that affect diode impedance. A discussion of these mechanisms includes experimental evidence of their existence and their effects on the observed diode impedance. A simple model for the current is used in a time-dependent analysis of the data in order to demonstrate qualitative effects. The rise time of the electric field, the cathode-plasma velocity, the time-dependent generation of ion sources from the anode, and the special diode geometries (tapered cathodes) are shown to affect the diode impedance in good agreement with theory.

• Research Organization: Naval Research Laboratory, Washington, D.C. 20375
• OSTI ID: 6750454
• Journal Information: J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Journal Issue: 9 Vol. 49:9; ISSN JAPIA
• Country of Publication: United States
• Language: English

Related Subjects

70 PLASMA PHYSICS AND FUSION TECHNOLOGY
700106* -- Fusion Energy-- Plasma Research-- Plasma Production-- (-1987)
BEAMS
COMPUTER CODES
ELECTRIC FIELDS
ELECTRON BEAMS
ENERGY RANGE
IMPEDANCE
LEPTON BEAMS
PARTICLE BEAMS
PINCH EFFECT
PLASMA SIMULATION
RELATIVISTIC RANGE