Stability of amorphous metals on semiconductor substrates. Final report
Technical Report
·
OSTI ID:6568576
Both the diffusion measurements and in situ resistance results for gold-NiNb indicate that relaxation type processes are active in the 300 to 400/sup 0/C temperature range. The diffusion measurements also suggest no differences for samples relaxed at 570/sup 0/C for 10 hours and at 500, and 540/sup 0/C for 5 hours. The nature of the gold NiNb interaction during diffusion annealing requires further study. Also, the fact that the gold forms a plateau concentration in the region of the gold/NiNb interface suggests the existence of a possible metastable equilibrium state between the crystalline phase forming during interdiffusion and the unreacted underlying amorphous film. Finally the diffusion of Ta and amorphous NiTa into an amorphous NiNb film has been examined by RBS. The diffusion process is much slower than gold diffusion into NiNb and no compound formation was observed. After an initial period of about 7 hours at 505/sup 0/C no further diffusion was detected for the Ta and NiTa overlayers, suggesting the possibility that surface coatings may act to stablize the amorphous NiNb film.
- Research Organization:
- Wisconsin Univ., Madison (USA)
- DOE Contract Number:
- AC02-82ER12062
- OSTI ID:
- 6568576
- Report Number(s):
- DOE/ER/12062-T1; ON: DE84017256
- Country of Publication:
- United States
- Language:
- English
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