Study of II-IV-V/sub 2/ chalcopyrite semiconductors for solar cell applications. Quarterly report No. 1, September 1, 1976--December 1, 1976. [ZnSiAs/sub 2/]
During the first quarter, the major effort has been directed towards constructing a state-of-the-art vapor-phase epitaxial reactor for the chemical vapor deposition of the II-IV-V/sub 2/ chalcopyrite ZnSiAs/sub 2/. The system construction has been completed, and a detailed description is given. After the system was completed, several runs were made and material characterization has begun. The preliminary results show that one anticipated problem is not significant, since silane decomposition in this system has occurred for all deposition temperatures attempted (700/sup 0/C - 800/sup 0/C). The major problem at this time is due to the absence of Zn in the initialmore »