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Title: Study of II--IV--V/sub 2/ chalcopyrite semiconductors for solar cell applications. Quarterly report No. 3, April 1, 1977--June 30, 1977. [ZnSiAs/sub 2/]

Abstract

The activities and results of the chalcopyrite materials synthesis effort are described. Deposition of ZnSiAs/sub 2/ on 100 Ge and 111 Si substrates was continued with emphasis on identifying correlations between growth system settings and layer properties such as morphology, uniformity, growth rate, stoichiometry, and crystal structure. Results are discussed.

Authors:
Publication Date:
Research Org.:
North Carolina State Univ., Raleigh (USA). Dept. of Electrical Engineering
OSTI Identifier:
6565615
Report Number(s):
DST-2458-3
DOE Contract Number:
EX-76-C-01-2458
Resource Type:
Technical Report
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; 36 MATERIALS SCIENCE; CHALCOPYRITE; DEPOSITION; SILICON ARSENIDES; ZINC ARSENIDES; CHEMICAL REACTORS; CRYSTAL GROWTH; GERMANIUM; MORPHOLOGY; SILICON; SOLAR CELLS; SUBSTRATES; SYNTHESIS; ARSENIC COMPOUNDS; ARSENIDES; CHALCOGENIDES; COPPER COMPOUNDS; COPPER SULFIDES; DIRECT ENERGY CONVERTERS; ELEMENTS; IRON COMPOUNDS; IRON SULFIDES; METALS; MINERALS; PHOTOELECTRIC CELLS; PHOTOVOLTAIC CELLS; PNICTIDES; SEMIMETALS; SILICON COMPOUNDS; SULFIDES; SULFUR COMPOUNDS; TRANSITION ELEMENT COMPOUNDS; ZINC COMPOUNDS; 140501* - Solar Energy Conversion- Photovoltaic Conversion; 360601 - Other Materials- Preparation & Manufacture

Citation Formats

Littlejohn, M.A.. Study of II--IV--V/sub 2/ chalcopyrite semiconductors for solar cell applications. Quarterly report No. 3, April 1, 1977--June 30, 1977. [ZnSiAs/sub 2/]. United States: N. p., 1978. Web. doi:10.2172/6565615.
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Littlejohn, M.A.. Study of II--IV--V/sub 2/ chalcopyrite semiconductors for solar cell applications. Quarterly report No. 3, April 1, 1977--June 30, 1977. [ZnSiAs/sub 2/]. United States. doi:10.2172/6565615.
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Littlejohn, M.A.. Wed . "Study of II--IV--V/sub 2/ chalcopyrite semiconductors for solar cell applications. Quarterly report No. 3, April 1, 1977--June 30, 1977. [ZnSiAs/sub 2/]". United States. doi:10.2172/6565615. https://www.osti.gov/servlets/purl/6565615.
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@article{osti_6565615,
title = {Study of II--IV--V/sub 2/ chalcopyrite semiconductors for solar cell applications. Quarterly report No. 3, April 1, 1977--June 30, 1977. [ZnSiAs/sub 2/]},
author = {Littlejohn, M.A.},
abstractNote = {The activities and results of the chalcopyrite materials synthesis effort are described. Deposition of ZnSiAs/sub 2/ on 100 Ge and 111 Si substrates was continued with emphasis on identifying correlations between growth system settings and layer properties such as morphology, uniformity, growth rate, stoichiometry, and crystal structure. Results are discussed.},
doi = {10.2172/6565615},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Wed Feb 22 00:00:00 EST 1978},
month = {Wed Feb 22 00:00:00 EST 1978}
}
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Technical Report:
View Technical Report (0.39 MB)
DOI:  10.2172/6565615
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  • During the first quarter, the major effort has been directed towards constructing a state-of-the-art vapor-phase epitaxial reactor for the chemical vapor deposition of the II-IV-V/sub 2/ chalcopyrite ZnSiAs/sub 2/. The system construction has been completed, and a detailed description is given. After the system was completed, several runs were made and material characterization has begun. The preliminary results show that one anticipated problem is not significant, since silane decomposition in this system has occurred for all deposition temperatures attempted (700/sup 0/C - 800/sup 0/C). The major problem at this time is due to the absence of Zn in the initialmore » deposits. This problem was not anticipated. However, some first-order transport calculations show that the Zn transport can be improved, and very recent results have shown Zn to be incorporated in the films.« less

  • Research was directed towards the synthesis and characterization of the n-type deposits. The conditions required for growth of the n-type layers were found and the emphasis was then returned to the problem of obtaining thicker layers of p-ZnSiAs/sub 2/ via higher growth rates. The conditions required for consistent epitaxial growth were also pursued. Results are presented.

  • An investigation of one of the chalcopyrite semiconductors (ZnSiAs/sub 2/) in order to assess its suitability as a solar cell material is described. In work previously performed, ZnSiAs/sub 2/ had been synthesized using an open tube vapor phase epitaxial growth technique. Epitaxial layers of ZnSiAs/sub 2/ had been deposited on Ge and GaAs substrates (both (001) and (112) ZnSiAs/sub 2/ on (100) and (111) substrates, respectively). Epitaxial deposits were routinely achieved while the surface appearance varied from mirror-like to a dull appearance which resulted from a relatively rough surface topography. Mirror-like finishes were clearly an achievable goal but required additionalmore » refinements in growth technique and substrate preparation before they could be routinely achieved. At this time three critical goals have been identified that must be achieved before ZnSiAs/sub 2/ can be realistically assessed. (1) hole concentrations must be reduced from the current 10/sup 18/ to 10/sup 19//cm/sup 3/ range to the 10/sup 16/ to 10/sup 17//cm/sup 3/ range; (2) n-type ZnSiAs/sub 2/ must be demonstrated; (3) ZnSiAs/sub 2/ p-n junctions must be demonstrated. The approach taken and the progress made toward achieving these goals are discussed as well as the planned effort for the next quarter. (WHK)« less

  • The purpose of this study is to continue an investigation of one of the chalcopyrite semiconductors (ZnSiAs/sub 2/) in order to assess its suitability as a solar cell material. ZnSiAs/sub 2/ was previously synthesized using an open tube vapor phase epitaxial growth technique, and epitaxial layers of ZnSiAs/sub 2/ were deposited on Ge and GaAs substrates (both (001) and (112) ZnSiAs/sub 2/ on (100) and (111) substrates, respectively). Epitaxial deposits were routinely achieved while the surface appearance varied from mirror-like to a dull appearance which resulted from a relatively rough surface topography. Mirror-like finishes were clearly an achievable goal butmore » required additional refinements in growth technique and substrate preparation before they could be routinely achieved. Three critical goals have been identified that must be achieved before ZnSiAs/sub 2/ can be realistically assessed: (1) hole concentrations must be reduced from the current 10/sup 18/ to 10/sup 19//cm/sup 3/ range to the 10/sup 16/ to 10/sup 17//cm/sup 3/ range; (2) n-type ZnSiAs/sub 2/ must be demonstrated; and (3) ZnSiAs/sub 2/ p-n junctions must be demonstrated. The approach taken and the progress made toward achieving these goals as well as the planned effort for the next quarter are described.« less

  • ; ;
    The purpose of the work on this contract is to study the suitability of Zn/sub 3/P/sub 2/ as a photovoltaic material for large scale terrestrial use. Zn/sub 3/P/sub 2/ was chosen for study after a systematic literature search revealed it as one of the most promising unexplored compounds for use as the absorber-generator portion of a photovoltaic cell. Measurements of many of the key parameters of the material were refined and many were completed, and emphasis shifted toward device studies on single crystals. Schottky diodes were made with Mg and Al contacts on well polished single crystals. Because of technologicalmore » problems with the contacts, the metallization had to be thick, and consequently opaque. Thus devices were used mainly to study the contact and material parameters, but not the photovoltaic effect to any great extent.« less