Influence of the carrier distribution on carrier-carrier scattering in GaAs
- IBM Research Division, Thomas J. Watson Research Center, Yorktown Heights, New York 10598 (United States)
Hot electrons in GaAs in the presence of a highly nonequilibrium plasma generated by a 150-fs laser pulse are shown to have an energy-loss rate to the plasma that is two to four times higher than a hot electron in the presence of a cooler, thermalized plasma of the same density. The increased energy-loss rate due to the nonequilibrium plasma is consistent with the reduced screening that has been predicted for such a plasma. In addition, the linewidth of the hot acceptor luminescence peak, which is used to measure the energy-loss rate, is found to be constant under fs laser excitation as the injected carrier density is increased up to about 2[times]10[sup 16] cm[sup [minus]3]. This finding disagrees with a recent prediction. Possible reasons for the disagreement are considered.
- OSTI ID:
- 6562070
- Journal Information:
- Physical Review, B: Condensed Matter; (United States), Vol. 51:7; ISSN 0163-1829
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
SUPERCONDUCTIVITY AND SUPERFLUIDITY
36 MATERIALS SCIENCE
GALLIUM ARSENIDES
SOLID-STATE PLASMA
BERYLLIUM ADDITIONS
CHARGE CARRIERS
ELECTRON-ELECTRON COLLISIONS
ENERGY LOSSES
LASER RADIATION
LUMINESCENCE
TEMPERATURE RANGE 0000-0013 K
ALLOYS
ARSENIC COMPOUNDS
ARSENIDES
BERYLLIUM ALLOYS
COLLISIONS
ELECTROMAGNETIC RADIATION
ELECTRON COLLISIONS
GALLIUM COMPOUNDS
LOSSES
PLASMA
PNICTIDES
RADIATIONS
TEMPERATURE RANGE
665200* - Solid-State Plasma- (1992-)
360606 - Other Materials- Physical Properties- (1992-)