Hot-carrier energy-loss rates in GaAs/Al/sub x/Ga/sub 1-//sub x/As quantum wells

Journal Article · Fri Jul 15 04:00:00 EDT 1988 · Phys. Rev. B: Condens. Matter; (United States)

DOI:https://doi.org/10.1103/PhysRevB.38.1947· OSTI ID:6952077

Leo, K; Ruehle, W W; Ploog, K

We present a systematic study of the cooling of hot carriers in undoped, n-type doped, and p-type doped GaAs/Al/sub x/Ga/sub 1-//sub x/As quantum wells of different well widths by time-resolved luminescence spectroscopy. The energy loss of the carriers due to interaction with optical phonons is independent of dimensionality and well width. The energy loss of electrons is highly reduced at all excitation densities compared with a simple theory of the interactions; for holes, the energy loss comes close to theory at low excitation density. The reduction of the energy-loss rate by optical-phonon scattering cannot be explained by screening or degeneracy but rather is consistent with a hot-phonon effect. The energy-loss rate due to deformation-potential scattering with acoustical phonons increases with decreasing well width.

• Research Organization: Max-Planck-Institut fuer Festkoerperforschung, Heisenbergstrasse 1, Postfach 80chemically bond06chemically bond65, D-7000 Stuttgart 80, Federal Republic of Germany
• OSTI ID: 6952077
• Journal Information: Phys. Rev. B: Condens. Matter; (United States), Journal Name: Phys. Rev. B: Condens. Matter; (United States) Vol. 38:3; ISSN PRBMD
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360603* -- Materials-- Properties
70 PLASMA PHYSICS AND FUSION TECHNOLOGY
700103 -- Fusion Energy-- Plasma Research-- Kinetics
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
CHARGE CARRIERS
ELECTRON-HOLE DROPLETS
ELECTRON-PHONON COUPLING
ENERGY LOSSES
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HETEROJUNCTIONS
JUNCTIONS
LOSSES
LUMINESCENCE
MATERIALS
PLASMA
PNICTIDES
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR MATERIALS
SOLID-STATE PLASMA
SPECTROSCOPY
TRANSMISSION