Band-gap renormalization in semiconductor quantum wells containing carriers
Journal Article
·
· Phys. Rev. B: Condens. Matter; (United States)
A theoretical calculation is presented of the so-called ''gap renormalization'' due to free carriers for the quasi-two-dimensional (2D) electrons or holes confined in a semiconductor quantum well. A general theory of the effect is developed assuming parabolic subbands, the Hubbard approximation (random-phase approximation) for the correlation energy, and a model potential containing the well thickness for the effective 2D Coulomb interaction. Results are presented for gap renormalization versus carrier density for GaAs wells of 81 and 217 A thickness. An experimental measurement of gap renormalization is presented which is based on an analysis of the excitation and luminescence spectra of a p-type modulation-doped Ga(Ga/sub 1-x/Al/sub x/)As multilayer sample of well width 107 A and hole density 5.3 x 10/sup 10/ cm/sup -2/. The calculated value is in excellent agreement with the experimental value (6.3 meV) in this case.
- Research Organization:
- ATandT Bell Laboratories, Murray Hill, New Jersey 07974
- OSTI ID:
- 5576361
- Journal Information:
- Phys. Rev. B: Condens. Matter; (United States), Journal Name: Phys. Rev. B: Condens. Matter; (United States) Vol. 32:4; ISSN PRBMD
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
36 MATERIALS SCIENCE
360603* -- Materials-- Properties
ARSENIC COMPOUNDS
ARSENIDES
CARRIER DENSITY
CORRELATIONS
ELECTRON CORRELATION
ELECTRONS
ELEMENTARY PARTICLES
ENERGY GAP
FERMIONS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HOLES
LEPTONS
MATERIALS
PNICTIDES
RANDOM PHASE APPROXIMATION
RENORMALIZATION
SEMICONDUCTOR MATERIALS
360603* -- Materials-- Properties
ARSENIC COMPOUNDS
ARSENIDES
CARRIER DENSITY
CORRELATIONS
ELECTRON CORRELATION
ELECTRONS
ELEMENTARY PARTICLES
ENERGY GAP
FERMIONS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HOLES
LEPTONS
MATERIALS
PNICTIDES
RANDOM PHASE APPROXIMATION
RENORMALIZATION
SEMICONDUCTOR MATERIALS