Comparison of hot-carrier relaxation in quantum wells and bulk GaAs at high carrier densities

Journal Article · Wed Jan 15 00:00:00 EST 1992 · Physical Review, B: Condensed Matter; (United States)

DOI:https://doi.org/10.1103/PhysRevB.45.1450· OSTI ID:5025786

Pelouch, W S; Ellingson, R J; Powers, P E; Tang, C L ^[1]; Szmyd, D M; Nozik, A J ^[2]

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1. Materials Science Center, Cornell University, Ithaca, New York 14853 (United States)
2. Solar Energy Research Institute, 1617 Cole Boulevard, Golden, Colorado 80401 (United States)

An investigation of the hot-carrier relaxation in GaAs/(Al,Ga)As quantum wells and bulk GaAs in the high-carrier-density limit is presented. Using a time-resolved luminescence up-conversion technique with {le}80-fs temporal resolution, carrier temperatures are measured in the 100-fs-to-2-ns range. Our results show that the hot-carrier cooling rates in the quantum wells are significantly slower than in the bulk for carrier densities greater than 2{times}10{sup 18} cm{sup {minus}3}. A comparison is made with previous publications to resolve the confusion concerning the difference in cooling rates in quasi-two- and three-dimensional systems.

• OSTI ID: 5025786
• Journal Information: Physical Review, B: Condensed Matter; (United States), Vol. 45:3; ISSN 0163-1829
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ALUMINIUM ARSENIDES
LUMINESCENCE
GALLIUM ARSENIDES
AMBIENT TEMPERATURE
CARRIER DENSITY
POWER RANGE MILLI W
RELAXATION
TIME RESOLUTION
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
GALLIUM COMPOUNDS
PNICTIDES
RESOLUTION
TIMING PROPERTIES
360606* - Other Materials- Physical Properties- (1992-)