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Noise characterization of transistors in a 1. 2 [mu]m CMOS-SOI technology up to a total-dose of 12 Mrad (Si)

Conference · · IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States)
OSTI ID:6559083
; ; ; ; ;  [1]; ;  [2]
  1. CERN, Geneva (Switzerland)
  2. Thomson TCS, St. Egreve (France)
+ Show Author Affiliations

The analog performance of the Thomson HSOI3-HD technology has been measured up to a total dose of 12 Mrad(Si) of ionizing radiation ([sup 60]Co). The threshold voltage shift is [minus]170 mV for p-channel and [minus]20 mV for n-channel transistor. Transconductance degradation is respectively 4% and 17%. Noise has been measured in the 500 Hz-25 MHz bandwidth. In addition to the 1/f and white noise, a generation-recombination contribution appears in the noise spectrum. This contribution is sensitive to the bias applied to the backgate and body electrodes. The white noise increase after irradiation is 16% for p-channel and 35% for n-channel transistors. P-channel transistors have very low 1/f noise and are less sensitive to irradiation effects.

OSTI ID:
6559083
Report Number(s):
CONF-940726--
Journal Information:
IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States), Journal Name: IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States) Vol. 41:6Pt1; ISSN 0018-9499; ISSN IETNAE
Country of Publication:
United States
Language:
English

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Related Subjects

440200* -- Radiation Effects on Instrument Components
Instruments
or Electronic Systems
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
BETA DECAY RADIOISOTOPES
BETA-MINUS DECAY RADIOISOTOPES
COBALT 60
COBALT ISOTOPES
DATA
ELECTRICAL PROPERTIES
EXPERIMENTAL DATA
INFORMATION
INTERMEDIATE MASS NUCLEI
INTERNAL CONVERSION RADIOISOTOPES
ISOMERIC TRANSITION ISOTOPES
ISOTOPES
MINUTES LIVING RADIOISOTOPES
NUCLEI
NUMERICAL DATA
ODD-ODD NUCLEI
PERFORMANCE TESTING
PHYSICAL PROPERTIES
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
RADIOISOTOPES
SEMICONDUCTOR DEVICES
TESTING
TRANSISTORS
YEARS LIVING RADIOISOT