Optical transitions involving unconfined energy states in In/sub x/Ga/sub 1-//sub x/As/GaAs multiple quantum wells

Journal Article · Wed Feb 15 00:00:00 EST 1989 · Phys. Rev. B: Condens. Matter; (United States)

DOI:https://doi.org/10.1103/PhysRevB.39.3216· OSTI ID:6550799

Ji, G; Dobbelaere, W; Huang, D; Morkoc, H

Optical transitions with energies higher than that of the GaAs band gap in highly strained In/sub x/Ga/sub 1-//sub x/As/GaAs multiple--quantum-well structures have been observed in photoreflectance spectra. In some samples as many as seven such structures were present. We identify them as transitions between the unconfined electron states and the confined heavy-hole states. For energies below the GaAs signal, intense transitions corresponding to such unconfined electron subbands were also observed. The intensity of the transitions involving unconfined electron subbands decreases with increasing well width, but is weakly dependent on the mole fraction x. The transmission coefficients are calculated in order to locate the positions of the unconfined electron subband energies. Good agreement is obtained between the experimental data and the theoretical calculation.

• Research Organization: Coordinated Science Laboratory, University of Illinois at Urbana-Champaign, 1101 West Springfield Avenue, Urbana, Illinois 61801-3082
• OSTI ID: 6550799
• Journal Information: Phys. Rev. B: Condens. Matter; (United States), Vol. 39:5
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
GALLIUM ARSENIDES
OPTICAL PROPERTIES
INDIUM ARSENIDES
HETEROJUNCTIONS
HOLES
LASER RADIATION
MEDIUM TEMPERATURE
SPECTROSCOPY
STRAINS
TRANSITION AMPLITUDES
AMPLITUDES
ARSENIC COMPOUNDS
ARSENIDES
ELECTROMAGNETIC RADIATION
GALLIUM COMPOUNDS
INDIUM COMPOUNDS
JUNCTIONS
PHYSICAL PROPERTIES
PNICTIDES
RADIATIONS
SEMICONDUCTOR JUNCTIONS
360603* - Materials- Properties