Study of the confined states in Al{sub x}Ga{sub 1−x}As/GaAs/vacuum surface quantum well

Journal Article · Mon Apr 14 00:00:00 EDT 2014 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4870960· OSTI ID:22273633

Wang, J. -Q. ^[1]

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1. Key Laboratory of Polar Materials and Devices, Ministry of Education, East China Normal University, Shanghai 200241 (China)

In this paper, we investigate the optical properties of confined electronic states in ultra-thin Al{sub 0.27}Ga{sub 0.73}As/GaAs/vacuum surface quantum wells by using photoreflectance spectroscopy at room temperature. Well-resolved doublet structures were found in the spectra. The energy of the features increases with decreasing well width in agreement with the predictions of a model of the transition energy between confined electron and hole states in a surface quantum well. Both the transition broadening and intensity behaviors are also well explained by the effective mass approximation theory. The offset between the un-perturbed theoretical transition energy and the experimental data has been explained by surface-state interaction effects. Moreover, the fact that the light hole ground state in the surface quantum well can be pushed out from the surface quantum well has been directly observed experimentally.

• OSTI ID: 22273633
• Journal Information: Journal of Applied Physics, Vol. 115, Issue 14; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

77 NANOSCIENCE AND NANOTECHNOLOGY
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ABSORPTION SPECTROSCOPY
ALUMINIUM COMPOUNDS
APPROXIMATIONS
EFFECTIVE MASS
ELECTRONS
GALLIUM ARSENIDES
GROUND STATES
HOLES
QUANTUM WELLS
SPECTRAL REFLECTANCE
SURFACES
TEMPERATURE RANGE 0273-0400 K
X-RAY SPECTROSCOPY